Wannier Diagrams for Semiconductor Artificial Graphene

O. A. Tkachenko; V. A. Tkachenko; D. G. Baksheev; O. P. Sushkov

doi:10.1134/S0021364022602020

Wannier Diagrams for Semiconductor Artificial Graphene

Переведенное название: Диаграммы Ванье для полупроводникового искусственного графена

O. A. Tkachenko, V. A. Tkachenko, D. G. Baksheev, O. P. Sushkov

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

Аннотация

Промоделирован квантовый транспорт в полупроводниковых гексагональных решетках антиточек с периодом 80 нм и коротковолновым беспорядком. Вычислены карты плотности состояний DoS как функции от напряженности магнитного поля B и концентрации электронов n (диаграммы Ванье) для нескольких амплитуд модуляции потенциала, сравнимых или существенно больше энергии Ферми. Глубокие провалы плотности состояний на картах имеют вид лучей положительного, нулевого и отрицательного наклона. Помимо веера лучей, разделяющих первый и второй, второй и третий уровни Ландау, на картах есть лучи им параллельные, сдвинутые по вертикали и горизонтали на целое число характерных значений концентрации n0 и магнитного поля B0. Показано, что знак и величина наклона лучей DoS соответствуют центрам плато квантованных холловских сопротивлений Rxy . Яркими проявлениями решетки на картах Rxy (n, B) являются реплики первого и второго плато Rxy и осцилляции Rxy между отрицательными и положительными значениями при фиксированном магнитном поле или концентрации, что говорит о смене дырочного и электронного типа носителей.

Переведенное название	Диаграммы Ванье для полупроводникового искусственного графена
Язык оригинала	английский
Страницы (с-по)	638-642
Число страниц	5
Журнал	JETP Letters
Том	116
Номер выпуска	9
DOI	https://doi.org/10.1134/S0021364022602020
Состояние	Опубликовано - нояб. 2022

Предметные области OECD FOS+WOS

1.03 ФИЗИЧЕСКИЕ НАУКИ И АСТРОНОМИЯ

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10.1134/S0021364022602020

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@article{a19f89f84dc44df79334d54cf2d4c468,

title = "Wannier Diagrams for Semiconductor Artificial Graphene",

abstract = "Quantum transport has been simulated in hexagonal semiconductor lattices of antidots with a period of 80 nm and short-range disorder. Wannier diagrams, i.e., DoS(n, B) maps of the density of states, where n is the electron density and B is the magnetic field strength, have been calculated for several potential modulation amplitudes comparable to or much larger than the Fermi energy. Deep dips in the maps of the density of states have the form of rays with positive, zero, and negative slopes. In addition to the fan of the rays separating the first and second, as well as the second and third Landau levels, the maps include rays that are parallel to them and are shifted in n and B by integers of the characteristic electron density n0 and the characteristic magnetic field strength B0, respectively. It has been shown that the sign and magnitude of the slope of the rays in the density of states correspond to the centers of the plateaus of quantized Hall resistances Rxy. The lattice is brightly manifested in the Rxy(n, B) maps as the replicas of the first and second plateaus in Rxy and as oscillations of Rxy between negative and positive values at a fixed magnetic field or a fixed electron density, which indicates the interchange between the hole and electron charge carriers.",

author = "Tkachenko, {O. A.} and Tkachenko, {V. A.} and Baksheev, {D. G.} and Sushkov, {O. P.}",

note = "Funding Information: This work was supported by the Russian Science Foundation, project no. 19-72-30023. Funding Information: We are grateful to O. Klochan, D.Q. Wang, Z.E. Krix, and A.R. Hamilton (University of New South Wales, Sydney, Australia) for stimulating discussion. We acknowledge resources provided by the Joint Supercomputer Center, Russian Academy of Sciences. Publisher Copyright: {\textcopyright} 2022, The Author(s).",

year = "2022",

month = nov,

doi = "10.1134/S0021364022602020",

language = "English",

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AU - Tkachenko, O. A.

AU - Tkachenko, V. A.

AU - Baksheev, D. G.

AU - Sushkov, O. P.

N1 - Funding Information: This work was supported by the Russian Science Foundation, project no. 19-72-30023. Funding Information: We are grateful to O. Klochan, D.Q. Wang, Z.E. Krix, and A.R. Hamilton (University of New South Wales, Sydney, Australia) for stimulating discussion. We acknowledge resources provided by the Joint Supercomputer Center, Russian Academy of Sciences. Publisher Copyright: © 2022, The Author(s).

PY - 2022/11

Y1 - 2022/11

N2 - Quantum transport has been simulated in hexagonal semiconductor lattices of antidots with a period of 80 nm and short-range disorder. Wannier diagrams, i.e., DoS(n, B) maps of the density of states, where n is the electron density and B is the magnetic field strength, have been calculated for several potential modulation amplitudes comparable to or much larger than the Fermi energy. Deep dips in the maps of the density of states have the form of rays with positive, zero, and negative slopes. In addition to the fan of the rays separating the first and second, as well as the second and third Landau levels, the maps include rays that are parallel to them and are shifted in n and B by integers of the characteristic electron density n0 and the characteristic magnetic field strength B0, respectively. It has been shown that the sign and magnitude of the slope of the rays in the density of states correspond to the centers of the plateaus of quantized Hall resistances Rxy. The lattice is brightly manifested in the Rxy(n, B) maps as the replicas of the first and second plateaus in Rxy and as oscillations of Rxy between negative and positive values at a fixed magnetic field or a fixed electron density, which indicates the interchange between the hole and electron charge carriers.

AB - Quantum transport has been simulated in hexagonal semiconductor lattices of antidots with a period of 80 nm and short-range disorder. Wannier diagrams, i.e., DoS(n, B) maps of the density of states, where n is the electron density and B is the magnetic field strength, have been calculated for several potential modulation amplitudes comparable to or much larger than the Fermi energy. Deep dips in the maps of the density of states have the form of rays with positive, zero, and negative slopes. In addition to the fan of the rays separating the first and second, as well as the second and third Landau levels, the maps include rays that are parallel to them and are shifted in n and B by integers of the characteristic electron density n0 and the characteristic magnetic field strength B0, respectively. It has been shown that the sign and magnitude of the slope of the rays in the density of states correspond to the centers of the plateaus of quantized Hall resistances Rxy. The lattice is brightly manifested in the Rxy(n, B) maps as the replicas of the first and second plateaus in Rxy and as oscillations of Rxy between negative and positive values at a fixed magnetic field or a fixed electron density, which indicates the interchange between the hole and electron charge carriers.

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