Viscous magnetotransport and Gurzhi effect in bilayer electron system

G. M. Gusev, A. S. Jaroshevich, A. D. Levin, Z. D. Kvon, A. K. Bakarov

Результат исследования: Научные публикации в периодических изданияхстатьярецензирование


We observe a large negative magnetoresistance and a decrease of resistivity with increasing temperature, known as the Gurzhi effect, in a bilayer (BL) electron system formed by a wide GaAs quantum well. A hydrodynamic model for the single fluid transport parameters in narrow channels is employed and successfully describes our experimental findings. We find that the electron-electron scattering in the bilayer is more intensive in comparison with a single-band well (SW). The hydrodynamic assumption implies a strong dependence on boundary conditions, which can be characterized by slip length, describing the behavior of a liquid near the edge. Our results reveal that slip length in a BL is shorter than in a SW, and that the BL system goes deeper into the hydrodynamic regime. This is in agreement with the model proposed where the slip length is of the order of the electron-electron mean free path.

Язык оригиналаанглийский
Номер статьи075303
ЖурналPhysical Review B
Номер выпуска7
СостояниеОпубликовано - 10 фев 2021


Подробные сведения о темах исследования «Viscous magnetotransport and Gurzhi effect in bilayer electron system». Вместе они формируют уникальный семантический отпечаток (fingerprint).