We have studied a multilayer heteronanostructure comprising three pairs of amorphous silicon and amorphous germanium (a-Ge/a-Si:H) layers grown at 225°C on a silicon substrate by the method of low-frequency plasma-enhanced chemical vapor deposition. The phase composition of silicon and germanium layers was determined by Raman spectroscopy, which showed that the layers are completely amorphous. Transmission electron microscopy images revealed the presence of amorphous Ge nanoclusters ordered in the vertical direction, the formation of which was initiated by local nanometer-scale inhomogeneities in the first Ge layer, the lateral dimensions of which grow on the passage from bottom to top layer.
Предметные области OECD FOS+WOS
- 1.03 ФИЗИЧЕСКИЕ НАУКИ И АСТРОНОМИЯ