Vapor growth of Bi2Se3 and Bi2O2Se crystals on mica

K. A. Kokh; N. A. Nebogatikova; I. V. Antonova; D. A. Kustov; V. A. Golyashov; E. S. Goldyreva; N. P. Stepina; V. V. Kirienko; O. E. Tereshchenko

doi:10.1016/j.materresbull.2020.110906

Vapor growth of Bi₂Se₃ and Bi₂O₂Se crystals on mica

K. A. Kokh, N. A. Nebogatikova, I. V. Antonova, D. A. Kustov, V. A. Golyashov, E. S. Goldyreva, N. P. Stepina, V. V. Kirienko, O. E. Tereshchenko

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

Аннотация

Thin Bi₂Se₃ films were deposited on mica substrates by physical vapor deposition without the use of the carrier gas. It was found that the films with high structural quality and high conductivity are grown at a source temperature of approximately 500 °C. The resistance of 20–300 nm thick films is in the range of 10²-10⁴ Ω/sq as compared with ∼10 Ω/sq for thicker films. Bi₂O₂Se crystals with a similar resistivity are revealed to grow at higher temperatures (600–700 °C). It was suggested that the decrease of the thin film resistance is due to the contribution of the surface channels. Low resistivity of the Bi₂Se₃ films expands the scope of their possible applications as infra-red transparent electrodes.

Язык оригинала	английский
Номер статьи	110906
Число страниц	6
Журнал	Materials Research Bulletin
Том	129
DOI	https://doi.org/10.1016/j.materresbull.2020.110906
Состояние	Опубликовано - сент. 2020

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10.1016/j.materresbull.2020.110906

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title = "Vapor growth of Bi2Se3 and Bi2O2Se crystals on mica",

abstract = "Thin Bi2Se3 films were deposited on mica substrates by physical vapor deposition without the use of the carrier gas. It was found that the films with high structural quality and high conductivity are grown at a source temperature of approximately 500 °C. The resistance of 20–300 nm thick films is in the range of 102-104 Ω/sq as compared with ∼10 Ω/sq for thicker films. Bi2O2Se crystals with a similar resistivity are revealed to grow at higher temperatures (600–700 °C). It was suggested that the decrease of the thin film resistance is due to the contribution of the surface channels. Low resistivity of the Bi2Se3 films expands the scope of their possible applications as infra-red transparent electrodes.",

keywords = "Bismuth selenide, Electrical properties, Epitaxy, Mica, Microstructure, Physical vapor deposition, SB2TE3, RAMAN, BI2TE3, TOPOLOGICAL INSULATOR, QUANTUM OSCILLATIONS, SURFACE, THICKNESS",

author = "Kokh, {K. A.} and Nebogatikova, {N. A.} and Antonova, {I. V.} and Kustov, {D. A.} and Golyashov, {V. A.} and Goldyreva, {E. S.} and Stepina, {N. P.} and Kirienko, {V. V.} and Tereshchenko, {O. E.}",

year = "2020",

month = sep,

doi = "10.1016/j.materresbull.2020.110906",

language = "English",

volume = "129",

journal = "Materials Research Bulletin",

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T1 - Vapor growth of Bi2Se3 and Bi2O2Se crystals on mica

AU - Kokh, K. A.

AU - Nebogatikova, N. A.

AU - Antonova, I. V.

AU - Kustov, D. A.

AU - Golyashov, V. A.

AU - Goldyreva, E. S.

AU - Stepina, N. P.

AU - Kirienko, V. V.

AU - Tereshchenko, O. E.

PY - 2020/9

Y1 - 2020/9

N2 - Thin Bi2Se3 films were deposited on mica substrates by physical vapor deposition without the use of the carrier gas. It was found that the films with high structural quality and high conductivity are grown at a source temperature of approximately 500 °C. The resistance of 20–300 nm thick films is in the range of 102-104 Ω/sq as compared with ∼10 Ω/sq for thicker films. Bi2O2Se crystals with a similar resistivity are revealed to grow at higher temperatures (600–700 °C). It was suggested that the decrease of the thin film resistance is due to the contribution of the surface channels. Low resistivity of the Bi2Se3 films expands the scope of their possible applications as infra-red transparent electrodes.

AB - Thin Bi2Se3 films were deposited on mica substrates by physical vapor deposition without the use of the carrier gas. It was found that the films with high structural quality and high conductivity are grown at a source temperature of approximately 500 °C. The resistance of 20–300 nm thick films is in the range of 102-104 Ω/sq as compared with ∼10 Ω/sq for thicker films. Bi2O2Se crystals with a similar resistivity are revealed to grow at higher temperatures (600–700 °C). It was suggested that the decrease of the thin film resistance is due to the contribution of the surface channels. Low resistivity of the Bi2Se3 films expands the scope of their possible applications as infra-red transparent electrodes.

KW - Bismuth selenide

KW - Electrical properties

KW - Epitaxy

KW - Mica

KW - Microstructure

KW - Physical vapor deposition

KW - SB2TE3

KW - RAMAN

KW - BI2TE3

KW - TOPOLOGICAL INSULATOR

KW - QUANTUM OSCILLATIONS

KW - SURFACE

KW - THICKNESS

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U2 - 10.1016/j.materresbull.2020.110906

DO - 10.1016/j.materresbull.2020.110906

M3 - Article

AN - SCOPUS:85083812184

VL - 129

JO - Materials Research Bulletin

JF - Materials Research Bulletin

SN - 0025-5408

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