Valence-band offsets in strained SiGeSn/Si layers with different tin contents

A. A. Bloshkin, A. I. Yakimov, V. A. Timofeev, A. R. Tuktamyshev, A. I. Nikiforov, V. V. Murashov

Результат исследования: Научные публикации в периодических изданияхстатья

Аннотация

Admittance spectroscopy is used to study hole states in Si0.7–yGe0.3Sny/Si quantum wells in the tin content range y = 0.04–0.1. It is found that the hole binding energy increases with tin content. The hole size-quantization energies in structures containing a pseudomorphic Si0.7–yGe0.3Sny layer in the Si matrix are determined using the 6-band kp method. The valence-band offset at the Si0.7–yGe0.3Sny heterointerface is determined by combining the numerical calculation results and experimental data. It is found that the dependence of the experimental values of the valence-band offsets between pseudomorphic Si0.7–yGe0.3Sny layers and Si on the tin content is described by the expression ΔEV exp = (0.21 ± 0.01) + (3.35 ± 7.8 × 10–4)y eV.

Язык оригиналаанглийский
Страницы (с-по)329-334
Число страниц6
ЖурналSemiconductors
Том51
Номер выпуска3
DOI
СостояниеОпубликовано - 1 мар 2017

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    Bloshkin, A. A., Yakimov, A. I., Timofeev, V. A., Tuktamyshev, A. R., Nikiforov, A. I., & Murashov, V. V. (2017). Valence-band offsets in strained SiGeSn/Si layers with different tin contents. Semiconductors, 51(3), 329-334. https://doi.org/10.1134/S1063782617030058