Universality of the (113) Habit Plane in Si for Mixed Aggregation of Vacancies and Self-Interstitial Atoms Provided by Topological Bond Defect Formation

L. I. Fedina, A. K. Gutakovskii, Alexander V. Latyshev, Alexander L. Aseev

Результат исследования: Публикации в книгах, отчётах, сборниках, трудах конференцийглава/разделнаучнаярецензирование

Аннотация

This chapter presents results illuminating one of the long-standing problems in silicon related to the prevailing formation about extended defects in (113) planes on various process exposures. Based on in situ and ex situ high-resolution electron microscopy, supported with extensive defect structure modeling and image simulations, we demonstrate that mixed aggregation of vacancies (Vs) and self-interstitials (Is) takes place in the (113) plane to form close correlated I-V pairs or V2-2I clusters and even amorphous-like phases depending on irradiation conditions. The fact that multiple defect pairs are ordered in strict sequence along nearest neighboring atomic chains in the (332) direction constituting the (113) plane predetermines the subsequent formation of a universal set of topological-bond defects, comprising low-energy (0.7-1eV/atom) fivefold and eightfold atomic rings (5-8), and, thus, the universality of the (113) plane for mixed point defect aggregation. The ordered 5-8 array where all atoms are fully coordinated provides for defect recombination, or incorporation of excessive Is, to build up the 5-6h-7-8 topological structure known as the (113) interstitial-type of defect. Such a complex mechanism of point defect aggregation in Si is caused by a low symmetry of primary point defects, and results in a decreased crystal energy for any mixed clustering of defects in the (113) plane within a temperature range of T<0.5 melting.

Язык оригиналаанглийский
Название основной публикацииAdvances in Semiconductor Nanostructures
Подзаголовок основной публикацииGrowth, Characterization, Properties and Applications
РедакторыAV Latyshev, AV Dvurechenskii, AL Aseev
ИздательElsevier Science Inc.
Страницы383-407
Число страниц25
ISBN (электронное издание)9780128105139
ISBN (печатное издание)9780128105122
DOI
СостояниеОпубликовано - 1 янв 2017

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