This chapter presents results illuminating one of the long-standing problems in silicon related to the prevailing formation about extended defects in (113) planes on various process exposures. Based on in situ and ex situ high-resolution electron microscopy, supported with extensive defect structure modeling and image simulations, we demonstrate that mixed aggregation of vacancies (Vs) and self-interstitials (Is) takes place in the (113) plane to form close correlated I-V pairs or V2-2I clusters and even amorphous-like phases depending on irradiation conditions. The fact that multiple defect pairs are ordered in strict sequence along nearest neighboring atomic chains in the (332) direction constituting the (113) plane predetermines the subsequent formation of a universal set of topological-bond defects, comprising low-energy (0.7-1eV/atom) fivefold and eightfold atomic rings (5-8), and, thus, the universality of the (113) plane for mixed point defect aggregation. The ordered 5-8 array where all atoms are fully coordinated provides for defect recombination, or incorporation of excessive Is, to build up the 5-6h-7-8 topological structure known as the (113) interstitial-type of defect. Such a complex mechanism of point defect aggregation in Si is caused by a low symmetry of primary point defects, and results in a decreased crystal energy for any mixed clustering of defects in the (113) plane within a temperature range of T<0.5 melting.
|Название основной публикации||Advances in Semiconductor Nanostructures|
|Подзаголовок основной публикации||Growth, Characterization, Properties and Applications|
|Редакторы||AV Latyshev, AV Dvurechenskii, AL Aseev|
|Издатель||Elsevier Science Inc.|
|ISBN (электронное издание)||9780128105139|
|ISBN (печатное издание)||9780128105122|
|Состояние||Опубликовано - 1 янв 2017|