@article{f9cba4009e3a44e88bed54100e4f6948,
title = "Undoped High-Resistance GaN Buffer Layer for AlGaN/GaN High-Electron-Mobility Transistors",
abstract = "It is shown that intentionally undoped high-resistance GaN buffer layers in AlGaN/GaN heterostructures with high electron mobility for transistors can be formed by ammonia molecular beam epitaxy. The GaN growth conditions have been optimized using calculations of the background impurity and point defect concentrations at different ratios of the gallium and ammonia fluxes.",
keywords = "AlGaN/GaN, background impurities, GaN, high-electron-mobility transistor, intrinsic point defects, NH–MBE, SAPPHIRE, CARBON, GROWTH, NH3-MBE, AlGaN",
author = "Malin, {T. V.} and Milakhin, {D. S.} and Aleksandrov, {I. A.} and Zemlyakov, {V. E.} and Egorkin, {V. I.} and Zaitsev, {A. A.} and Protasov, {D. Yu} and Kozhukhov, {A. S.} and Ber, {B. Ya} and Kazantsev, {D. Yu} and Mansurov, {V. G.} and Zhuravlev, {K. S.}",
year = "2019",
month = aug,
day = "1",
doi = "10.1134/S1063785019080108",
language = "English",
volume = "45",
pages = "761--764",
journal = "Technical Physics Letters",
issn = "1063-7850",
publisher = "PLEIADES PUBLISHING INC",
number = "8",
}