Transport through the network of topological channels in HgTe based quantum well

G. M. Gusev, Z. D. Kvon, D. A. Kozlov, E. B. Olshanetsky, M. Entin, N. N. Mikhailov

Результат исследования: Научные публикации в периодических изданияхстатьярецензирование

Аннотация

Topological insulators (TIs) represent a new quantum state of matter which is characterized by edge or surface states and an insulating band gap in the bulk. In a two-dimensional (2D) system based on the HgTe quantum well (QW) of critical width random deviations of the well width from its average value result in local crossovers from zero gap 2D Dirac fermion system to either the 2D TI or the ordinary insulator, forming a complicated in-plane network of helical channels along the zero-gap lines. We have studied experimentally the transport properties of the critical width HgTe QWs near the Dirac point, where the conductance is determined by a percolation along the zero-gap lines. The experimental results confirm the presence of percolating conducting channels of a finite width. Our work establishes the critical width HgTe QW as a promising platform for the study of the interplay between topology and localization.

Язык оригиналаанглийский
Номер статьи015021
Число страниц8
Журнал2D Materials
Том9
Номер выпуска1
DOI
СостояниеОпубликовано - янв. 2022

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  • 1.04 ХИМИЧЕСКИЕ НАУКИ
  • 2.05 ТЕХНОЛОГИЯ МАТЕРИАЛОВ

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