Transparent silicon carbide/tunnel SiO2 passivation for c-Si solar cell front side: Enabling Jsc > 42 mA/cm2 and iVoc of 742 mV

Manuel Pomaska, Malte Köhler, Paul Procel Moya, Alexandr Zamchiy, Aryak Singh, Do Yun Kim, Olindo Isabella, Miro Zeman, Shenghao Li, Kaifu Qiu, Alexander Eberst, Vladimir Smirnov, Friedhelm Finger, Uwe Rau, Kaining Ding

Результат исследования: Научные публикации в периодических изданияхстатья

2 Цитирования (Scopus)

Аннотация

N-type microcrystalline silicon carbide (μc-SiC:H(n)) is a wide bandgap material that is very promising for the use on the front side of crystalline silicon (c-Si) solar cells. It offers a high optical transparency and a suitable refractive index that reduces parasitic absorption and reflection losses, respectively. In this work, we investigate the potential of hot wire chemical vapor deposition (HWCVD)–grown μc-SiC:H(n) for c-Si solar cells with interdigitated back contacts (IBC). We demonstrate outstanding passivation quality of μc-SiC:H(n) on tunnel oxide (SiO2)–passivated c-Si with an implied open-circuit voltage of 742 mV and a saturation current density of 3.6 fA/cm2. This excellent passivation quality is achieved directly after the HWCVD deposition of μc-SiC:H(n) at 250°C heater temperature without any further treatments like recrystallization or hydrogenation. Additionally, we developed magnesium fluoride (MgF2)/silicon nitride (SiNx:H)/silicon carbide antireflection coatings that reduce optical losses on the front side to only 0.47 mA/cm2 with MgF2/SiNx:H/μc-SiC:H(n) and 0.62 mA/cm2 with MgF2/μc-SiC:H(n). Finally, calculations with Sentaurus TCAD simulation using MgF2/μc-SiC:H(n)/SiO2/c-Si as front side layer stack in an IBC solar cell reveal a short-circuit current density of 42.2 mA/cm2, an open-circuit voltage of 738 mV, a fill factor of 85.2% and a maximum power conversion efficiency of 26.6%.

Язык оригиналаанглийский
Страницы (с-по)321-327
Число страниц7
ЖурналProgress in Photovoltaics: Research and Applications
Том28
Номер выпуска4
DOI
СостояниеОпубликовано - 1 апр 2020

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  • Цитировать

    Pomaska, M., Köhler, M., Procel Moya, P., Zamchiy, A., Singh, A., Kim, D. Y., Isabella, O., Zeman, M., Li, S., Qiu, K., Eberst, A., Smirnov, V., Finger, F., Rau, U., & Ding, K. (2020). Transparent silicon carbide/tunnel SiO2 passivation for c-Si solar cell front side: Enabling Jsc > 42 mA/cm2 and iVoc of 742 mV. Progress in Photovoltaics: Research and Applications, 28(4), 321-327. https://doi.org/10.1002/pip.3244