Transition from Sublimation to Growth in Thermal Smoothing and Roughening of GaAs Surfaces

Результат исследования: Публикации в книгах, отчётах, сборниках, трудах конференцийстатья в сборнике материалов конференциинаучнаярецензирование

Аннотация

Earlier a technique was developed for thermal GaAs smoothing by annealing in the presence of Ga and As vapors. The vapors were provided in a narrow gap between two GaAs samples, or by annealing in a closed container with a Ga-As melt. At annealing temperatures up to 650°C this technique yielded step-terraced GaAs surfaces. At increased temperatures, the transition from smoothing to kinetic-driven roughening was observed. This roughening revealed itself in the formation of islands (for sublimation) and holes (for growth) of multilayer height and depth. They are formed as a result of step motion through surface areas, where the sublimation and growth did not occur. These spots also act as step stopping centers and lead to step bunching. In this paper we present the results of additional experiments which clarify the reasons of the transition from sublimation to growth (i.e. from islands to holes) in the surface roughening at elevated temperatures. The thermal smoothing technique is further developed to reduce the role of surface roughening. This development allowed us to increase the GaAs smoothing temperature up to 775°C.

Язык оригиналаанглийский
Название основной публикацииProceedings of the 2022 IEEE 23rd International Conference of Young Professionals in Electron Devices and Materials, EDM 2022
ИздательIEEE Computer Society
Страницы25-28
Число страниц4
ISBN (электронное издание)9781665498043
DOI
СостояниеОпубликовано - 2022
Событие23rd IEEE International Conference of Young Professionals in Electron Devices and Materials, EDM 2022 - Altai, Российская Федерация
Продолжительность: 30 июн. 20224 июл. 2022

Серия публикаций

НазваниеInternational Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM
Том2022-June
ISSN (печатное издание)2325-4173
ISSN (электронное издание)2325-419X

Конференция

Конференция23rd IEEE International Conference of Young Professionals in Electron Devices and Materials, EDM 2022
Страна/TерриторияРоссийская Федерация
ГородAltai
Период30.06.202204.07.2022

Предметные области OECD FOS+WOS

  • 1.03 ФИЗИЧЕСКИЕ НАУКИ И АСТРОНОМИЯ

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