Transformation of the InP(001) surface upon annealing in an arsenic flux

Dmitriy V. Dmitriev, Danil A. Kolosovsky, Tatyana A. Gavrilova, Anton K. Gutakovskii, Alexander I. Toropov, Konstantin S. Zhuravlev

Результат исследования: Научные публикации в периодических изданияхстатьярецензирование


We report experimental study of the transformation of the oxide-coated InP(001) surface during annealing in an arsenic flux. Using the RHEED method, it was shown that an InP1-хAsх layer is formed on the surface. The transformation of an oxidized surface occurs at a temperature higher at about 60°C than the transformation of an atomically clean surface. The activation energy Ea = 1.17 eV of the formation of an arsenic-containing layer was determined. The amount of arsenic substitution for phosphorus at different annealing temperatures was determined, which is 7% at an annealing temperature of 480°C and increases to 41% with an increase in the annealing temperature to 540°C. SEM analysis of surface reveals areas with high arsenic content (InAs islands). The size and density of such regions increases with an increase in the annealing temperature and at 540°C reaches 5.5 × 103 nm2 and 6 × 109 cm−2, respectively. However, despite the local inhomogeneities, the main surface area is covered with a uniform InPAs layer. The area covered with InAs islands occupies about 1.5% of the surface area at an annealing temperature of 540°C.

Язык оригиналаанглийский
Номер статьи121861
ЖурналSurface Science
СостояниеОпубликовано - авг. 2021

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Подробные сведения о темах исследования «Transformation of the InP(001) surface upon annealing in an arsenic flux». Вместе они формируют уникальный семантический отпечаток (fingerprint).