Thermoelectric transport in a three-dimensional hgte topological insulator

Gennady M. Gusev; Ze D. Kvon; Alexander D. Levin; Nikolay N. Mikhailov

doi:10.3390/nano11123364

Thermoelectric transport in a three-dimensional hgte topological insulator

Gennady M. Gusev, Ze D. Kvon, Alexander D. Levin, Nikolay N. Mikhailov

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

Аннотация

The thermoelectric response of 80 nm-thick strained HgTe films of a three-dimensional topological insulator (3D TI) has been studied experimentally. An ambipolar thermopower is observed where the Fermi energy moves from conducting to the valence bulk band. The comparison between theory and experiment shows that the thermopower is mostly due to the phonon drag contribution. In the region where the 2D Dirac electrons coexist with bulk hole states, the Seebeck coefficient is modified due to 2D electron–3D hole scattering.

Язык оригинала	английский
Номер статьи	3364
Журнал	Nanomaterials
Том	11
Номер выпуска	12
DOI	https://doi.org/10.3390/nano11123364
Состояние	Опубликовано - дек. 2021

Предметные области OECD FOS+WOS

2.04 ХИМИЧЕСКИЕ ТЕХНОЛОГИИ
2.05 ТЕХНОЛОГИЯ МАТЕРИАЛОВ

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10.3390/nano11123364

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title = "Thermoelectric transport in a three-dimensional hgte topological insulator",

abstract = "The thermoelectric response of 80 nm-thick strained HgTe films of a three-dimensional topological insulator (3D TI) has been studied experimentally. An ambipolar thermopower is observed where the Fermi energy moves from conducting to the valence bulk band. The comparison between theory and experiment shows that the thermopower is mostly due to the phonon drag contribution. In the region where the 2D Dirac electrons coexist with bulk hole states, the Seebeck coefficient is modified due to 2D electron–3D hole scattering.",

keywords = "HgTe quantum well, Quantum transport, Thermopower, Topological insulator",

author = "Gusev, {Gennady M.} and Kvon, {Ze D.} and Levin, {Alexander D.} and Mikhailov, {Nikolay N.}",

note = "Funding Information: Funding: The financial support of this work by the Ministry of Science and Higher Education of the Russian Federation, Grant No. 075-15-2020-797 (13.1902.21.0024); S{\~a}o Paulo Research Foundation (FAPESP) Grant No. 2015/16191-5, and the National Council for Scientific and Technological Development (CNPq) is acknowledged. Publisher Copyright: {\textcopyright} 2021 by the authors. Licensee MDPI, Basel, Switzerland.",

year = "2021",

month = dec,

doi = "10.3390/nano11123364",

language = "English",

volume = "11",

journal = "Nanomaterials",

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AU - Gusev, Gennady M.

AU - Kvon, Ze D.

AU - Levin, Alexander D.

AU - Mikhailov, Nikolay N.

N1 - Funding Information: Funding: The financial support of this work by the Ministry of Science and Higher Education of the Russian Federation, Grant No. 075-15-2020-797 (13.1902.21.0024); São Paulo Research Foundation (FAPESP) Grant No. 2015/16191-5, and the National Council for Scientific and Technological Development (CNPq) is acknowledged. Publisher Copyright: © 2021 by the authors. Licensee MDPI, Basel, Switzerland.

PY - 2021/12

Y1 - 2021/12

N2 - The thermoelectric response of 80 nm-thick strained HgTe films of a three-dimensional topological insulator (3D TI) has been studied experimentally. An ambipolar thermopower is observed where the Fermi energy moves from conducting to the valence bulk band. The comparison between theory and experiment shows that the thermopower is mostly due to the phonon drag contribution. In the region where the 2D Dirac electrons coexist with bulk hole states, the Seebeck coefficient is modified due to 2D electron–3D hole scattering.

AB - The thermoelectric response of 80 nm-thick strained HgTe films of a three-dimensional topological insulator (3D TI) has been studied experimentally. An ambipolar thermopower is observed where the Fermi energy moves from conducting to the valence bulk band. The comparison between theory and experiment shows that the thermopower is mostly due to the phonon drag contribution. In the region where the 2D Dirac electrons coexist with bulk hole states, the Seebeck coefficient is modified due to 2D electron–3D hole scattering.

KW - HgTe quantum well

KW - Quantum transport

KW - Thermopower

KW - Topological insulator

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DO - 10.3390/nano11123364

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VL - 11

JO - Nanomaterials

JF - Nanomaterials

SN - 2079-4991

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ER -

Thermoelectric transport in a three-dimensional hgte topological insulator

Аннотация

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