The regularities of phase formation in Fe3Si(111)/Si(111) structure at vacuum annealing

M. N. Volochaev; I. A. Tarasov; Yu Yu Loginov; A. G. Cherkov; I. V. Kovalev

doi:10.1088/1742-6596/857/1/012053

The regularities of phase formation in Fe₃Si(111)/Si(111) structure at vacuum annealing

M. N. Volochaev, I. A. Tarasov, Yu Yu Loginov, A. G. Cherkov, I. V. Kovalev

Результат исследования: Научные публикации в периодических изданиях › статья по материалам конференции › рецензирование

3 Цитирования (Scopus)

Аннотация

The regularities of phase formation and thermal stability in Fe₃Si(111)/Si(111) structure at stepped vacuum annealing (350, 450 and 550 °C) were investigated. The layer of 32 nm Fe₃Si was deposited onto Si(111) substrate by molecular beam epitaxy at 260 °C. Transmission electron microscopy (TEM) measurements demonstrated that the film thickness increases by ∼19 % at 350 °C annealing without changing the phase composition. The polycrystalline -FeSi sublayer was formed on the interface at 450 °C annealing. Further annealing at 550 °C led to the ∼ 80 nm polycrystalline film formation containing the crystallites of -FeSi, Fe₅Si₃, and β-FeSi₂ phases.

Язык оригинала	английский
Номер статьи	012053
Число страниц	3
Журнал	Journal of Physics: Conference Series
Том	857
Номер выпуска	1
DOI	https://doi.org/10.1088/1742-6596/857/1/012053
Состояние	Опубликовано - 1 июн 2017

Доступ к документу

10.1088/1742-6596/857/1/012053

Link to publication in Scopus

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@article{16364ec8eaed4d75bbf96fdc64671f46,

title = "The regularities of phase formation in Fe3Si(111)/Si(111) structure at vacuum annealing",

abstract = "The regularities of phase formation and thermal stability in Fe3Si(111)/Si(111) structure at stepped vacuum annealing (350, 450 and 550 °C) were investigated. The layer of 32 nm Fe3Si was deposited onto Si(111) substrate by molecular beam epitaxy at 260 °C. Transmission electron microscopy (TEM) measurements demonstrated that the film thickness increases by ∼19 % at 350 °C annealing without changing the phase composition. The polycrystalline -FeSi sublayer was formed on the interface at 450 °C annealing. Further annealing at 550 °C led to the ∼ 80 nm polycrystalline film formation containing the crystallites of -FeSi, Fe5Si3, and β-FeSi2 phases.",

keywords = "SPINTRONICS, GROWTH",

author = "Volochaev, {M. N.} and Tarasov, {I. A.} and Loginov, {Yu Yu} and Cherkov, {A. G.} and Kovalev, {I. V.}",

year = "2017",

month = jun,

day = "1",

doi = "10.1088/1742-6596/857/1/012053",

language = "English",

volume = "857",

journal = "Journal of Physics: Conference Series",

issn = "1742-6588",

publisher = "IOP Publishing Ltd.",

number = "1",

}

The regularities of phase formation in Fe₃Si(111)/Si(111) structure at vacuum annealing. / Volochaev, M. N.; Tarasov, I. A.; Loginov, Yu Yu; Cherkov, A. G.; Kovalev, I. V.

В: Journal of Physics: Conference Series, Том 857, № 1, 012053, 01.06.2017.

Результат исследования: Научные публикации в периодических изданиях › статья по материалам конференции › рецензирование

TY - JOUR

T1 - The regularities of phase formation in Fe3Si(111)/Si(111) structure at vacuum annealing

AU - Volochaev, M. N.

AU - Tarasov, I. A.

AU - Loginov, Yu Yu

AU - Cherkov, A. G.

AU - Kovalev, I. V.

PY - 2017/6/1

Y1 - 2017/6/1

N2 - The regularities of phase formation and thermal stability in Fe3Si(111)/Si(111) structure at stepped vacuum annealing (350, 450 and 550 °C) were investigated. The layer of 32 nm Fe3Si was deposited onto Si(111) substrate by molecular beam epitaxy at 260 °C. Transmission electron microscopy (TEM) measurements demonstrated that the film thickness increases by ∼19 % at 350 °C annealing without changing the phase composition. The polycrystalline -FeSi sublayer was formed on the interface at 450 °C annealing. Further annealing at 550 °C led to the ∼ 80 nm polycrystalline film formation containing the crystallites of -FeSi, Fe5Si3, and β-FeSi2 phases.

AB - The regularities of phase formation and thermal stability in Fe3Si(111)/Si(111) structure at stepped vacuum annealing (350, 450 and 550 °C) were investigated. The layer of 32 nm Fe3Si was deposited onto Si(111) substrate by molecular beam epitaxy at 260 °C. Transmission electron microscopy (TEM) measurements demonstrated that the film thickness increases by ∼19 % at 350 °C annealing without changing the phase composition. The polycrystalline -FeSi sublayer was formed on the interface at 450 °C annealing. Further annealing at 550 °C led to the ∼ 80 nm polycrystalline film formation containing the crystallites of -FeSi, Fe5Si3, and β-FeSi2 phases.

KW - SPINTRONICS

KW - GROWTH

UR - http://www.scopus.com/inward/record.url?scp=85021354814&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/857/1/012053

DO - 10.1088/1742-6596/857/1/012053

M3 - Conference article

AN - SCOPUS:85021354814

VL - 857

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012053

ER -