The Influence of the InAlAs Layer Surface Morphology on the Temperature Dependence of Parameters of Au/Ti/n-InAlAs(001) Schottky Diodes

I. B. Chistokhin; M. S. Aksenov; N. A. Valisheva; D. V. Dmitriev; I. V. Marchishin; A. I. Toropov; K. S. Zhuravlev

doi:10.1134/S106378501902024X

The Influence of the InAlAs Layer Surface Morphology on the Temperature Dependence of Parameters of Au/Ti/n-InAlAs(001) Schottky Diodes

I. B. Chistokhin, M. S. Aksenov, N. A. Valisheva, D. V. Dmitriev, I. V. Marchishin, A. I. Toropov, K. S. Zhuravlev

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

Аннотация

Growth-related structural defects present on the surface of InAlAs layers grown by molecular beam epitaxy on InP(001) substrates influence the temperature dependences of the current–voltage characteristics of Au/Ti/InAlAs Schottky barriers. It is established that these defects in the form of pits cause the appearance of regions with reduced barrier height. At a surface density of ≥10 ⁷ cm ^–2 , these defects significantly influence the parameters of the Schottky barriers at temperatures below 200 K.

Язык оригинала	английский
Страницы (с-по)	180-184
Число страниц	5
Журнал	Technical Physics Letters
Том	45
Номер выпуска	2
DOI	https://doi.org/10.1134/S106378501902024X
Состояние	Опубликовано - 1 фев 2019

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10.1134/S106378501902024X

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@article{190a9577bd954bf9816cd54c6449257e,

title = "The Influence of the InAlAs Layer Surface Morphology on the Temperature Dependence of Parameters of Au/Ti/n-InAlAs(001) Schottky Diodes",

abstract = "Growth-related structural defects present on the surface of InAlAs layers grown by molecular beam epitaxy on InP(001) substrates influence the temperature dependences of the current–voltage characteristics of Au/Ti/InAlAs Schottky barriers. It is established that these defects in the form of pits cause the appearance of regions with reduced barrier height. At a surface density of ≥10 7 cm –2 , these defects significantly influence the parameters of the Schottky barriers at temperatures below 200 K. ",

author = "Chistokhin, {I. B.} and Aksenov, {M. S.} and Valisheva, {N. A.} and Dmitriev, {D. V.} and Marchishin, {I. V.} and Toropov, {A. I.} and Zhuravlev, {K. S.}",

year = "2019",

month = feb,

day = "1",

doi = "10.1134/S106378501902024X",

language = "English",

volume = "45",

pages = "180--184",

journal = "Technical Physics Letters",

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number = "2",

}

The Influence of the InAlAs Layer Surface Morphology on the Temperature Dependence of Parameters of Au/Ti/n-InAlAs(001) Schottky Diodes. / Chistokhin, I. B.; Aksenov, M. S.; Valisheva, N. A.; Dmitriev, D. V.; Marchishin, I. V.; Toropov, A. I.; Zhuravlev, K. S.

В: Technical Physics Letters, Том 45, № 2, 01.02.2019, стр. 180-184.

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

TY - JOUR

T1 - The Influence of the InAlAs Layer Surface Morphology on the Temperature Dependence of Parameters of Au/Ti/n-InAlAs(001) Schottky Diodes

AU - Chistokhin, I. B.

AU - Aksenov, M. S.

AU - Valisheva, N. A.

AU - Dmitriev, D. V.

AU - Marchishin, I. V.

AU - Toropov, A. I.

AU - Zhuravlev, K. S.

PY - 2019/2/1

Y1 - 2019/2/1

N2 - Growth-related structural defects present on the surface of InAlAs layers grown by molecular beam epitaxy on InP(001) substrates influence the temperature dependences of the current–voltage characteristics of Au/Ti/InAlAs Schottky barriers. It is established that these defects in the form of pits cause the appearance of regions with reduced barrier height. At a surface density of ≥10 7 cm –2 , these defects significantly influence the parameters of the Schottky barriers at temperatures below 200 K.

AB - Growth-related structural defects present on the surface of InAlAs layers grown by molecular beam epitaxy on InP(001) substrates influence the temperature dependences of the current–voltage characteristics of Au/Ti/InAlAs Schottky barriers. It is established that these defects in the form of pits cause the appearance of regions with reduced barrier height. At a surface density of ≥10 7 cm –2 , these defects significantly influence the parameters of the Schottky barriers at temperatures below 200 K.

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JO - Technical Physics Letters

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