Аннотация
Growth-related structural defects present on the surface of InAlAs layers grown by molecular beam epitaxy on InP(001) substrates influence the temperature dependences of the current–voltage characteristics of Au/Ti/InAlAs Schottky barriers. It is established that these defects in the form of pits cause the appearance of regions with reduced barrier height. At a surface density of ≥10 7 cm –2 , these defects significantly influence the parameters of the Schottky barriers at temperatures below 200 K.
Язык оригинала | английский |
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Страницы (с-по) | 180-184 |
Число страниц | 5 |
Журнал | Technical Physics Letters |
Том | 45 |
Номер выпуска | 2 |
DOI | |
Состояние | Опубликовано - 1 фев 2019 |