The increase in band bending at the p-GaN(Cs) - Vacuum interface due to the photoemission from surface states

S. A. Rozhkov; V. V. Bakin; S. N. Kosolobov; H. E. Scheibler; A. S. Terekhov

doi:10.1088/1742-6596/1482/1/012008

The increase in band bending at the p-GaN(Cs) - Vacuum interface due to the photoemission from surface states

S. A. Rozhkov, V. V. Bakin, S. N. Kosolobov, H. E. Scheibler, A. S. Terekhov

Результат исследования: Научные публикации в периодических изданиях › статья по материалам конференции › рецензирование

Аннотация

The photoelectron processes in a p-GaN(Cs) photocathode with the effective negative electron affinity were studied experimentally within the 90-295 K temperature range. It was found that the photocathode illumination at the photon energies, which are below the energy gap of the p-GaN layer, increases the band bending at a semiconductor surface due to the photoemission from surface states.

Язык оригинала	английский
Номер статьи	012008
Журнал	Journal of Physics: Conference Series
Том	1482
Номер выпуска	1
DOI	https://doi.org/10.1088/1742-6596/1482/1/012008
Состояние	Опубликовано - 1 мар 2020
Событие	21st Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2019 - St. Petersburg, Российская Федерация Продолжительность: 25 ноя 2019 → 29 ноя 2019

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10.1088/1742-6596/1482/1/012008

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title = "The increase in band bending at the p-GaN(Cs) - Vacuum interface due to the photoemission from surface states",

abstract = "The photoelectron processes in a p-GaN(Cs) photocathode with the effective negative electron affinity were studied experimentally within the 90-295 K temperature range. It was found that the photocathode illumination at the photon energies, which are below the energy gap of the p-GaN layer, increases the band bending at a semiconductor surface due to the photoemission from surface states.",

author = "Rozhkov, {S. A.} and Bakin, {V. V.} and Kosolobov, {S. N.} and Scheibler, {H. E.} and Terekhov, {A. S.}",

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The increase in band bending at the p-GaN(Cs) - Vacuum interface due to the photoemission from surface states. / Rozhkov, S. A.; Bakin, V. V.; Kosolobov, S. N.; Scheibler, H. E.; Terekhov, A. S.

В: Journal of Physics: Conference Series, Том 1482, № 1, 012008, 01.03.2020.

Результат исследования: Научные публикации в периодических изданиях › статья по материалам конференции › рецензирование

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T1 - The increase in band bending at the p-GaN(Cs) - Vacuum interface due to the photoemission from surface states

AU - Rozhkov, S. A.

AU - Bakin, V. V.

AU - Kosolobov, S. N.

AU - Scheibler, H. E.

AU - Terekhov, A. S.

PY - 2020/3/1

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AB - The photoelectron processes in a p-GaN(Cs) photocathode with the effective negative electron affinity were studied experimentally within the 90-295 K temperature range. It was found that the photocathode illumination at the photon energies, which are below the energy gap of the p-GaN layer, increases the band bending at a semiconductor surface due to the photoemission from surface states.

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