Аннотация
The photoelectron processes in a p-GaN(Cs) photocathode with the effective negative electron affinity were studied experimentally within the 90-295 K temperature range. It was found that the photocathode illumination at the photon energies, which are below the energy gap of the p-GaN layer, increases the band bending at a semiconductor surface due to the photoemission from surface states.
Язык оригинала | английский |
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Номер статьи | 012008 |
Журнал | Journal of Physics: Conference Series |
Том | 1482 |
Номер выпуска | 1 |
DOI | |
Состояние | Опубликовано - 1 мар 2020 |
Событие | 21st Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2019 - St. Petersburg, Российская Федерация Продолжительность: 25 ноя 2019 → 29 ноя 2019 |