The increase in band bending at the p-GaN(Cs) - Vacuum interface due to the photoemission from surface states

S. A. Rozhkov; V. V. Bakin; S. N. Kosolobov; H. E. Scheibler; A. S. Terekhov

doi:10.1088/1742-6596/1482/1/012008

The increase in band bending at the p-GaN(Cs) - Vacuum interface due to the photoemission from surface states

S. A. Rozhkov, V. V. Bakin, S. N. Kosolobov, H. E. Scheibler, A. S. Terekhov

Результат исследования: Научные публикации в периодических изданиях › статья по материалам конференции › рецензирование

Аннотация

The photoelectron processes in a p-GaN(Cs) photocathode with the effective negative electron affinity were studied experimentally within the 90-295 K temperature range. It was found that the photocathode illumination at the photon energies, which are below the energy gap of the p-GaN layer, increases the band bending at a semiconductor surface due to the photoemission from surface states.

Язык оригинала	английский
Номер статьи	012008
Журнал	Journal of Physics: Conference Series
Том	1482
Номер выпуска	1
DOI	https://doi.org/10.1088/1742-6596/1482/1/012008
Состояние	Опубликовано - 1 мар 2020
Событие	21st Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2019 - St. Petersburg, Российская Федерация Продолжительность: 25 ноя 2019 → 29 ноя 2019

Доступ к документу

10.1088/1742-6596/1482/1/012008

Link to publication in Scopus

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Цитировать

@article{ce4a629797b34b87886ecc8d4557a7d1,

title = "The increase in band bending at the p-GaN(Cs) - Vacuum interface due to the photoemission from surface states",

abstract = "The photoelectron processes in a p-GaN(Cs) photocathode with the effective negative electron affinity were studied experimentally within the 90-295 K temperature range. It was found that the photocathode illumination at the photon energies, which are below the energy gap of the p-GaN layer, increases the band bending at a semiconductor surface due to the photoemission from surface states.",

author = "Rozhkov, {S. A.} and Bakin, {V. V.} and Kosolobov, {S. N.} and Scheibler, {H. E.} and Terekhov, {A. S.}",

year = "2020",

month = mar,

day = "1",

doi = "10.1088/1742-6596/1482/1/012008",

language = "English",

volume = "1482",

journal = "Journal of Physics: Conference Series",

issn = "1742-6588",

publisher = "IOP Publishing Ltd.",

number = "1",

note = "21st Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2019 ; Conference date: 25-11-2019 Through 29-11-2019",

}

The increase in band bending at the p-GaN(Cs) - Vacuum interface due to the photoemission from surface states. / Rozhkov, S. A.; Bakin, V. V.; Kosolobov, S. N.; Scheibler, H. E.; Terekhov, A. S.

В: Journal of Physics: Conference Series, Том 1482, № 1, 012008, 01.03.2020.

Результат исследования: Научные публикации в периодических изданиях › статья по материалам конференции › рецензирование

TY - JOUR

T1 - The increase in band bending at the p-GaN(Cs) - Vacuum interface due to the photoemission from surface states

AU - Rozhkov, S. A.

AU - Bakin, V. V.

AU - Kosolobov, S. N.

AU - Scheibler, H. E.

AU - Terekhov, A. S.

PY - 2020/3/1

Y1 - 2020/3/1

N2 - The photoelectron processes in a p-GaN(Cs) photocathode with the effective negative electron affinity were studied experimentally within the 90-295 K temperature range. It was found that the photocathode illumination at the photon energies, which are below the energy gap of the p-GaN layer, increases the band bending at a semiconductor surface due to the photoemission from surface states.

AB - The photoelectron processes in a p-GaN(Cs) photocathode with the effective negative electron affinity were studied experimentally within the 90-295 K temperature range. It was found that the photocathode illumination at the photon energies, which are below the energy gap of the p-GaN layer, increases the band bending at a semiconductor surface due to the photoemission from surface states.

UR - http://www.scopus.com/inward/record.url?scp=85082992824&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/1482/1/012008

DO - 10.1088/1742-6596/1482/1/012008

M3 - Conference article

AN - SCOPUS:85082992824

VL - 1482

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012008

T2 - 21st Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2019

Y2 - 25 November 2019 through 29 November 2019

ER -