The effect of passivation layer, doping and spacer layer on electron- longitudinal optical phonon momentum relaxation time in Al0.3Ga0.7N/AlN/GaN heterostructures

F. Sonmez, S. Ardali, G. Atmaca, S. B. Lisesivdin, T. Malin, V. Mansurov, K. Zhuravlev, E. Tiras

Результат исследования: Научные публикации в периодических изданияхстатьярецензирование

Аннотация

The Raman and classical Hall effect measurements have been used to determine the longitudinal optical phonon energy, effective mass, and optical phonon relaxation times in Al0.3Ga0.7N/AlN/GaN heterostructures grown by the Molecular Beam Epitaxy (MBE) technique. The classical Hall effect measurements were performed at temperatures between 1.8 and 262 K at a fixed magnetic field, while Raman measurements were performed at room temperature. The longitudinal optical (LO) phonon energy has been found at higher temperatures where Hall mobility data is rapidly decreasing. The effective mass is obtained by comparing the A1(LO) peak obtained from Raman measurements to theoretical calculations. The effect of passivation, spacer layer, and doping on the LO phonon relaxation times were determined. The LO phonon relaxation times, which are important for the device's performance, were found between 8.97 and 9.20 fs.

Язык оригиналаанглийский
Номер статьи105449
ЖурналMaterials Science in Semiconductor Processing
Том122
DOI
СостояниеОпубликовано - фев 2021

Fingerprint Подробные сведения о темах исследования «The effect of passivation layer, doping and spacer layer on electron- longitudinal optical phonon momentum relaxation time in Al<sub>0.3</sub>Ga<sub>0.7</sub>N/AlN/GaN heterostructures». Вместе они формируют уникальный семантический отпечаток (fingerprint).

Цитировать