The Effect of Fluorine on the Density of States at the Anodic Oxide Layer/In_0.53Ga_0.47As Interface

It is shown that the fluorine-containing anodic layers at the n-In_0.53Ga_0.47As surface, in contrast to the fluorine-free anodic layers, form a SiO₂/InGaAs interface with the unpinned Fermi level, where the density of states decreases upon annealing at a temperature of 300°C to (2–4) × 10¹¹ and (4–5) × 10¹² eV^–1 cm^–2 near the bottom of the conduction band and the center of the band gap, respectively. An increase in the annealing temperature leads to a reverse increase in the density of states (350°C) and pinning of the Fermi level (400°C).