The dislocation structure of diamond crystals grown on seeds in the Mg-C system

Alexander F. Khokhryakov, Denis V. Nechaev, Yuri N. Palyanov, Konstantin E. Kuper

Результат исследования: Научные публикации в периодических изданияхстатьярецензирование

12 Цитирования (Scopus)


The dislocation structure of diamond crystals grown in the Mg-C system at a pressure of 7 GPa and temperatures of 1800–1900 °C is studied by X-ray topography and selective etching. According to the selective etching data, diamond crystals have two types of dislocations whose outputs on the {100} faces of crystal are associated with two types of etch pits. It has been demonstrated that the etch pits with the side wall inclination angle of about 7° are formed at the outcrop points of full edge dislocations, while the etch pits with the inclination angle of about 4° are associated with 45° mixed dislocations. It has been found that the dislocation structure of diamonds grown at 1900 °C is completely determined by the seed crystals structure and the dislocation density is 105 cm− 2. The dislocation density in the diamond crystals grown at 1800 °C increases by two or three orders of magnitude due to nucleation of dislocations at the seed-overgrown layer interface and in the overgrown layer. The high dislocation density leads to the mosaic structure of crystals and misorientation of single blocks, up to 1°. Local ring clusters of edge dislocations were found to be the dominant source of growth layers on the {100} faces of diamond.

Язык оригиналаанглийский
Страницы (с-по)1-6
Число страниц6
ЖурналDiamond and Related Materials
СостояниеОпубликовано - 1 ноя 2016


Подробные сведения о темах исследования «The dislocation structure of diamond crystals grown on seeds in the Mg-C system». Вместе они формируют уникальный семантический отпечаток (fingerprint).