THE DEPOSITION OF GERMANIUM NANOPARTICLES ON HYDROGENATED AMORPHOUS SILICON

Jiri Stuchlik, Vladimir A. Volodin, Alexander A. Shklyaev, The Ha Stuchlikova, Martin Ledinsky, Jan Cermak, Jaroslav Kupcik, Radek Fajgar, Vincent Mortet, Joris More-Chevalier, Petr Ashcheulov, Adam Purkrt, Zdenek Remes

Результат исследования: Публикации в книгах, отчётах, сборниках, трудах конференцийстатья в сборнике материалов конференциинаучнаярецензирование

Аннотация

We reveal the mechanism of Ge nanoparticles (NPs) formation on the surface of the hydrogenated amorphous silicon (a-Si:H) deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) on ITO and a on boron doped nanocrystalline diamond (BDD). The coating of Ge NPs on a-Si:H was performed by molecular beam epitaxy (MBE) at temperatures up to 450 degrees C. The Ge NPs were characterized by Raman spectroscopy, scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). The nanocrystalline Ge particles are conglomerates of nanocrystals of size 10-15 nm and quantum dots (QDs) with size below 2 nm embedded in amorphous Ge phase. After coating with Ge NPs the a-Si:H thin films show better adhesion on BDD substrates then on ITO substrates.

Язык оригиналаанглийский
Название основной публикации8TH INTERNATIONAL CONFERENCE ON NANOMATERIALS - RESEARCH & APPLICATION (NANOCON 2016)
ИздательTANGER LTD
Страницы133-137
Число страниц5
СостояниеОпубликовано - 2017
Событие8th International Conference on Nanomaterials - Research and Application (NANOCON) - Brno, Чехия
Продолжительность: 19 окт 201621 окт 2016

Конференция

Конференция8th International Conference on Nanomaterials - Research and Application (NANOCON)
СтранаЧехия
ГородBrno
Период19.10.201621.10.2016

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