Аннотация
We reveal the mechanism of Ge nanoparticles (NPs) formation on the surface of the hydrogenated amorphous silicon (a-Si:H) deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) on ITO and a on boron doped nanocrystalline diamond (BDD). The coating of Ge NPs on a-Si:H was performed by molecular beam epitaxy (MBE) at temperatures up to 450 degrees C. The Ge NPs were characterized by Raman spectroscopy, scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). The nanocrystalline Ge particles are conglomerates of nanocrystals of size 10-15 nm and quantum dots (QDs) with size below 2 nm embedded in amorphous Ge phase. After coating with Ge NPs the a-Si:H thin films show better adhesion on BDD substrates then on ITO substrates.
Язык оригинала | английский |
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Название основной публикации | 8TH INTERNATIONAL CONFERENCE ON NANOMATERIALS - RESEARCH & APPLICATION (NANOCON 2016) |
Издатель | TANGER LTD |
Страницы | 133-137 |
Число страниц | 5 |
Состояние | Опубликовано - 2017 |
Событие | 8th International Conference on Nanomaterials - Research and Application (NANOCON) - Brno, Чехия Продолжительность: 19 окт 2016 → 21 окт 2016 |
Конференция
Конференция | 8th International Conference on Nanomaterials - Research and Application (NANOCON) |
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Страна | Чехия |
Город | Brno |
Период | 19.10.2016 → 21.10.2016 |