Аннотация
The increase in the indium mole fraction in the quantum well of pHEMT heterostructures with donor-acceptor doping causes an increase in the 2DEG concentration from 2.2• 10 12 cm -2 to 3.9• 10 12 cm -2 and a decrease in mobility from 7900 cm 2 V -1 s -1 to 7500 cm 2 V -1 s -1 at room temperature. The temperature dependencies of 2DEG mobility show that the deformation potential scattering grows at increment of indium mole fraction in quantum well. Absolute values of the deformation potential are approximately two times smaller than the widely used values and increases with increasing of indium mole fraction.
Язык оригинала | английский |
---|---|
Номер статьи | 012033 |
Журнал | IOP Conference Series: Materials Science and Engineering |
Том | 475 |
Номер выпуска | 1 |
DOI | |
Состояние | Опубликовано - 18 фев 2019 |
Событие | 7th International Conferences on Physics and Technology of Nanoheterostructure Microwave Electronics, Mokerov Readings 2016 and 8th International Conferences on Physics and Technology of Nanoheterostructure Microwave Electronics, Mokerov Readings 2017 - Moscow, Российская Федерация Продолжительность: 24 мая 2017 → … |