The deformation-potential scattering and alloy disorder scattering in donor-acceptor pHEMT heterostructures

D. Yu Protasov; A. K. Bakarov; A. I. Toropov; K. S. Zhuravlev

doi:10.1088/1757-899X/475/1/012033

The deformation-potential scattering and alloy disorder scattering in donor-acceptor pHEMT heterostructures

D. Yu Protasov, A. K. Bakarov, A. I. Toropov, K. S. Zhuravlev

Результат исследования: Научные публикации в периодических изданиях › статья по материалам конференции › рецензирование

Аннотация

The increase in the indium mole fraction in the quantum well of pHEMT heterostructures with donor-acceptor doping causes an increase in the 2DEG concentration from 2.2• 10 ¹² cm ^-2 to 3.9• 10 ¹² cm ^-2 and a decrease in mobility from 7900 cm ² V ^-1 s ^-1 to 7500 cm ² V ^-1 s ^-1 at room temperature. The temperature dependencies of 2DEG mobility show that the deformation potential scattering grows at increment of indium mole fraction in quantum well. Absolute values of the deformation potential are approximately two times smaller than the widely used values and increases with increasing of indium mole fraction.

Язык оригинала	английский
Номер статьи	012033
Журнал	IOP Conference Series: Materials Science and Engineering
Том	475
Номер выпуска	1
DOI	https://doi.org/10.1088/1757-899X/475/1/012033
Состояние	Опубликовано - 18 февр. 2019
Событие	7th International Conferences on Physics and Technology of Nanoheterostructure Microwave Electronics, Mokerov Readings 2016 and 8th International Conferences on Physics and Technology of Nanoheterostructure Microwave Electronics, Mokerov Readings 2017 - Moscow, Российская Федерация Продолжительность: 24 мая 2017 → …

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10.1088/1757-899X/475/1/012033

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title = "The deformation-potential scattering and alloy disorder scattering in donor-acceptor pHEMT heterostructures",

abstract = " The increase in the indium mole fraction in the quantum well of pHEMT heterostructures with donor-acceptor doping causes an increase in the 2DEG concentration from 2.2• 10 12 cm -2 to 3.9• 10 12 cm -2 and a decrease in mobility from 7900 cm 2 V -1 s -1 to 7500 cm 2 V -1 s -1 at room temperature. The temperature dependencies of 2DEG mobility show that the deformation potential scattering grows at increment of indium mole fraction in quantum well. Absolute values of the deformation potential are approximately two times smaller than the widely used values and increases with increasing of indium mole fraction. ",

author = "{Yu Protasov}, D. and Bakarov, {A. K.} and Toropov, {A. I.} and Zhuravlev, {K. S.}",

note = "Publisher Copyright: {\textcopyright} Published under licence by IOP Publishing Ltd.; 7th International Conferences on Physics and Technology of Nanoheterostructure Microwave Electronics, Mokerov Readings 2016 and 8th International Conferences on Physics and Technology of Nanoheterostructure Microwave Electronics, Mokerov Readings 2017 ; Conference date: 24-05-2017",

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The deformation-potential scattering and alloy disorder scattering in donor-acceptor pHEMT heterostructures. / Yu Protasov, D.; Bakarov, A. K.; Toropov, A. I. и др.

В: IOP Conference Series: Materials Science and Engineering, Том 475, № 1, 012033, 18.02.2019.

Результат исследования: Научные публикации в периодических изданиях › статья по материалам конференции › рецензирование

TY - JOUR

T1 - The deformation-potential scattering and alloy disorder scattering in donor-acceptor pHEMT heterostructures

AU - Yu Protasov, D.

AU - Bakarov, A. K.

AU - Toropov, A. I.

AU - Zhuravlev, K. S.

PY - 2019/2/18

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N2 - The increase in the indium mole fraction in the quantum well of pHEMT heterostructures with donor-acceptor doping causes an increase in the 2DEG concentration from 2.2• 10 12 cm -2 to 3.9• 10 12 cm -2 and a decrease in mobility from 7900 cm 2 V -1 s -1 to 7500 cm 2 V -1 s -1 at room temperature. The temperature dependencies of 2DEG mobility show that the deformation potential scattering grows at increment of indium mole fraction in quantum well. Absolute values of the deformation potential are approximately two times smaller than the widely used values and increases with increasing of indium mole fraction.

AB - The increase in the indium mole fraction in the quantum well of pHEMT heterostructures with donor-acceptor doping causes an increase in the 2DEG concentration from 2.2• 10 12 cm -2 to 3.9• 10 12 cm -2 and a decrease in mobility from 7900 cm 2 V -1 s -1 to 7500 cm 2 V -1 s -1 at room temperature. The temperature dependencies of 2DEG mobility show that the deformation potential scattering grows at increment of indium mole fraction in quantum well. Absolute values of the deformation potential are approximately two times smaller than the widely used values and increases with increasing of indium mole fraction.

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JO - IOP Conference Series: Materials Science and Engineering

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