@inproceedings{3af09de61aa640989915476d3c345c5c,
title = "The DA-pHEMT heterostructures for power microwave transistors",
abstract = "The structural, transport and optical properties of DA-pHEMT heterostructures are considered. Despite the high 2DEG density (~4×1012 cm-2), parallel conductance is almost lacking in DA-pHEMT heterostructures: the electron density in the parallel conducting layer does not exceed 11% of the 2DEG density, and the electron mobility is lower than the 2DEG mobility by a factor of more than 2.5. It was determined that the beryllium concentration in the undoped InGaAs QW does not exceed 2×016 cm-3 in spite of the Be segregation from the p+-doped barriers during the epitaxy growth. The results of the development of powerful DA-pHEMT are presented. Transistors with a gate length of 0.4-0.5 μm and a total gate width of 0.8 mm at a frequency of 10 GHz have a gain of more than 9 dB, an output power density of more than 1.6 W/mm, a power added efficiency up to 50%.",
keywords = "2DEG mobility, donor-acceptor doping, output power density, pHEMT, DENSITY, FIELD-EFFECT TRANSISTORS",
author = "Zhuravlev, {K. S.} and Protasov, {D. Yu} and Gulyaev, {D. V.} and Bakarov, {A. K.} and Toropov, {A. I.} and Lapin, {V. G.} and Lukashin, {V. M.} and Pashkovskii, {A. B.}",
year = "2019",
month = may,
day = "1",
doi = "10.1109/IEEE-IWS.2019.8804008",
language = "English",
series = "2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings",
address = "United States",
note = "2019 IEEE MTT-S International Wireless Symposium, IWS 2019 ; Conference date: 19-05-2019 Through 22-05-2019",
}