@inproceedings{1d9ec3fc711d484da3a31259f2038ae7,
title = "The charge trap density evolution in wake-up and fatigue modes of FRAM",
abstract = "We study the transport properties in different modes of FRAM elements based on ferroelectric Hf0.5Zr0.5O2 thin films. The leakage currents in Hf0.5Zr0.5O2 are described by phonon-assisted tunneling between traps. Comparison experimental data with results of the simulations allows us to extract the evaluation of the charge trap density during endurance. A hypothesis about role of oxygen vacancies in fatigue is discussed.",
keywords = "THIN-FILMS, FERROELECTRICITY, HF0.5ZR0.5O2, TRANSPORT",
author = "Islamov, {Damir R.} and Orlov, {O. M.} and Gritsenko, {V. A.} and Krasnikov, {G. Ja}",
year = "2017",
month = jan,
day = "1",
doi = "10.1149/08001.0279ecst",
language = "English",
isbn = "978-1-62332-470-4",
volume = "80",
series = "ECS Transactions",
publisher = "Electrochemical Society, Inc.",
pages = "279--281",
editor = "D Misra and S DeGendt and M Houssa and K Kita and D Landheer",
booktitle = "SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 15: IN MEMORY OF SAMARES KAR",
address = "United States",
edition = "1",
note = "15th Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics: In Memory of Samares Kar - 232nd ECS Meeting ; Conference date: 01-10-2017 Through 05-10-2017",
}