The 2DEG mobility enhancement for low- and high-electric fields in a new type of AlGaAs/InGaAs heterostructures with donor-acceptor doping

D. Yu Protasov, D. V. Gulyaev, A. K. Bakarov, A. I. Toropov, K. S. Zhuravlev

Результат исследования: Научные публикации в периодических изданияхстатья

1 Цитирования (Scopus)

Аннотация

The splitting of the delta-layers in the DA-pHEMT heterostructures has resulted in the increase of the spacer's effective thickness and growth of the low-field 2DEG mobility from 4000÷5000 cm2 V-1 s-1 up to 6500 cm2 V-1 s-1 at the temperature of 300 K and 2DEG density of 4.0×1012 cm-2. The 2DEG mobility in the δ-splitted DA-pHEMT heterostructures almost coincides with the mobility in standard pHEMT heterostructures, but the 2DEG density in the DA-pHEMT heterostructures is approximately twice higher. The additional potential barrier in the DA-pHEMT heterostructures formed by the acceptors causes the reduction of the real-space transfer effect. Therefore, the drift saturation velocity in these heterostructures is higher than the drift saturation velocity in standard pHEMT heterostructures.

Язык оригиналаанглийский
Номер статьи012051
Число страниц4
ЖурналJournal of Physics: Conference Series
Том864
Номер выпуска1
DOI
СостояниеОпубликовано - 15 авг 2017

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