Terahertz Photoluminescence of Double Acceptors in Bulky Epitaxial HgCdTe Layers and HgTe/CdHgTe Structures with Quantum Wells

D. V. Kozlov, V. V. Rumyantsev, S. V. Morozov, A. M. Kadykov, M. A. Fadeev, M. S. Zholudev, V. S. Varavin, N. N. Mikhailov, S. A. Dvoretskii, V. I. Gavrilenko, F. Teppe

Результат исследования: Научные публикации в периодических изданияхстатья

4 Цитирования (Scopus)

Аннотация

Abstract: The photoluminescence of bulky films and heterostructures with HgCdTe quantum wells is studied in the far IR range upon interband optical excitation. Photoluminescence lines are found whose position is independent of temperature, and intensity nonmonotonically changes with increasing temperature. These lines are shown to be related to the radiative recombination of holes by singly ionized mercury vacancies. A drastic increase in the equilibrium recombination of such centers involved in the formation of the photoluminescence signal with the temperature change from 40 to 70 K leads to the nonmonotonic temperature dependence of the photoluminescence intensity.

Язык оригиналаанглийский
Страницы (с-по)1125-1129
Число страниц5
ЖурналJournal of Experimental and Theoretical Physics
Том127
Номер выпуска6
DOI
СостояниеОпубликовано - 1 дек 2018

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  • Цитировать

    Kozlov, D. V., Rumyantsev, V. V., Morozov, S. V., Kadykov, A. M., Fadeev, M. A., Zholudev, M. S., Varavin, V. S., Mikhailov, N. N., Dvoretskii, S. A., Gavrilenko, V. I., & Teppe, F. (2018). Terahertz Photoluminescence of Double Acceptors in Bulky Epitaxial HgCdTe Layers and HgTe/CdHgTe Structures with Quantum Wells. Journal of Experimental and Theoretical Physics, 127(6), 1125-1129. https://doi.org/10.1134/S1063776118100035