Terahertz photoconductivity of double acceptors in narrow gap HgCdTe epitaxial films grown by molecular beam epitaxy on GaAs(013) and Si(013) substrates

V. V. Rumyantsev, D. V. Kozlov, S. V. Morozov, M. A. Fadeev, A. M. Kadykov, F. Teppe, V. S. Varavin, M. V. Yakushev, N. N. Mikhailov, S. A. Dvoretskii, V. I. Gavrilenko

Результат исследования: Научные публикации в периодических изданияхстатья

15 Цитирования (Scopus)

Аннотация

The energy spectra of the mercury vacancy, the most common acceptor in HgCdTe material, is studied via numerical calculations and low temperature photoconductivity (PC) measurements of 'vacancy-doped' HgCdTe films with low cadmium content. Since the Hg vacancy is known to be a double acceptor, the model for the helium atom was adopted for degerate valence band of zinc blende semiconductors to classify the observed PC bands. This approach provides a fairly good description of the photoionization of both neutral and singly-ionized vacancy when the central cell potential is taken into account.

Язык оригиналаанглийский
Номер статьи095007
Число страниц9
ЖурналSemiconductor Science and Technology
Том32
Номер выпуска9
DOI
СостояниеОпубликовано - 16 авг 2017

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    Rumyantsev, V. V., Kozlov, D. V., Morozov, S. V., Fadeev, M. A., Kadykov, A. M., Teppe, F., Varavin, V. S., Yakushev, M. V., Mikhailov, N. N., Dvoretskii, S. A., & Gavrilenko, V. I. (2017). Terahertz photoconductivity of double acceptors in narrow gap HgCdTe epitaxial films grown by molecular beam epitaxy on GaAs(013) and Si(013) substrates. Semiconductor Science and Technology, 32(9), [095007]. https://doi.org/10.1088/1361-6641/aa76a0