Аннотация
The energy spectra of the mercury vacancy, the most common acceptor in HgCdTe material, is studied via numerical calculations and low temperature photoconductivity (PC) measurements of 'vacancy-doped' HgCdTe films with low cadmium content. Since the Hg vacancy is known to be a double acceptor, the model for the helium atom was adopted for degerate valence band of zinc blende semiconductors to classify the observed PC bands. This approach provides a fairly good description of the photoionization of both neutral and singly-ionized vacancy when the central cell potential is taken into account.
Язык оригинала | английский |
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Номер статьи | 095007 |
Число страниц | 9 |
Журнал | Semiconductor Science and Technology |
Том | 32 |
Номер выпуска | 9 |
DOI | |
Состояние | Опубликовано - 16 авг. 2017 |