Аннотация
The temperature influence on the Cs/GaAs surface electronic properties, which determine the photon-enhanced thermionic emission (PETE), is studied. It was found that heating to moderate temperatures of about 100 °С leads to substantial changes in the magnitude and shape of Cs coverage dependences of photoemission current and surface band bending, along with the changes of relaxation kinetics after Cs deposition. A spectral proof of the PETE process is obtained under thermal cycling of the Cs/GaAs surface with 0.45 monolayer (ML) of Cs.
Язык оригинала | английский |
---|---|
Страницы (с-по) | 3-8 |
Число страниц | 6 |
Журнал | Applied Surface Science |
Том | 395 |
DOI | |
Состояние | Опубликовано - 15 фев 2017 |