Temperature dependence of photon-enhanced thermionic emission from GaAs surface with nonequilibrium Cs overlayers

A. G. Zhuravlev; V. L. Alperovich

doi:10.1016/j.apsusc.2016.05.057

Temperature dependence of photon-enhanced thermionic emission from GaAs surface with nonequilibrium Cs overlayers

A. G. Zhuravlev, V. L. Alperovich

Результат исследования: Научные публикации в периодических изданиях › статья

9 Цитирования (Scopus)

Аннотация

The temperature influence on the Cs/GaAs surface electronic properties, which determine the photon-enhanced thermionic emission (PETE), is studied. It was found that heating to moderate temperatures of about 100 °С leads to substantial changes in the magnitude and shape of Cs coverage dependences of photoemission current and surface band bending, along with the changes of relaxation kinetics after Cs deposition. A spectral proof of the PETE process is obtained under thermal cycling of the Cs/GaAs surface with 0.45 monolayer (ML) of Cs.

Язык оригинала	английский
Страницы (с-по)	3-8
Число страниц	6
Журнал	Applied Surface Science
Том	395
DOI	https://doi.org/10.1016/j.apsusc.2016.05.057
Состояние	Опубликовано - 15 фев 2017

Доступ к документу

10.1016/j.apsusc.2016.05.057

Link to publication in Scopus

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Цитировать

Zhuravlev, A. G., & Alperovich, V. L. (2017). Temperature dependence of photon-enhanced thermionic emission from GaAs surface with nonequilibrium Cs overlayers. Applied Surface Science, 395, 3-8. https://doi.org/10.1016/j.apsusc.2016.05.057

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AB - The temperature influence on the Cs/GaAs surface electronic properties, which determine the photon-enhanced thermionic emission (PETE), is studied. It was found that heating to moderate temperatures of about 100 °С leads to substantial changes in the magnitude and shape of Cs coverage dependences of photoemission current and surface band bending, along with the changes of relaxation kinetics after Cs deposition. A spectral proof of the PETE process is obtained under thermal cycling of the Cs/GaAs surface with 0.45 monolayer (ML) of Cs.

KW - Cesium

KW - GaAs surface

KW - Photoemission

KW - Photon-enhanced thermionic emission

KW - Solar energy conversion

KW - ENERGY

KW - INTERFACE

KW - CESIUM

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JO - Applied Surface Science

JF - Applied Surface Science

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