Temperature dependence of photon-enhanced thermionic emission from GaAs surface with nonequilibrium Cs overlayers

A. G. Zhuravlev; V. L. Alperovich

doi:10.1016/j.apsusc.2016.05.057

Temperature dependence of photon-enhanced thermionic emission from GaAs surface with nonequilibrium Cs overlayers

A. G. Zhuravlev, V. L. Alperovich

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

14 Цитирования (Scopus)

Аннотация

The temperature influence on the Cs/GaAs surface electronic properties, which determine the photon-enhanced thermionic emission (PETE), is studied. It was found that heating to moderate temperatures of about 100 °С leads to substantial changes in the magnitude and shape of Cs coverage dependences of photoemission current and surface band bending, along with the changes of relaxation kinetics after Cs deposition. A spectral proof of the PETE process is obtained under thermal cycling of the Cs/GaAs surface with 0.45 monolayer (ML) of Cs.

Язык оригинала	английский
Страницы (с-по)	3-8
Число страниц	6
Журнал	Applied Surface Science
Том	395
DOI	https://doi.org/10.1016/j.apsusc.2016.05.057
Состояние	Опубликовано - 15 февр. 2017

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10.1016/j.apsusc.2016.05.057

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@article{63344b102a3f4b2981d97c6de2de41c8,

title = "Temperature dependence of photon-enhanced thermionic emission from GaAs surface with nonequilibrium Cs overlayers",

abstract = "The temperature influence on the Cs/GaAs surface electronic properties, which determine the photon-enhanced thermionic emission (PETE), is studied. It was found that heating to moderate temperatures of about 100 °С leads to substantial changes in the magnitude and shape of Cs coverage dependences of photoemission current and surface band bending, along with the changes of relaxation kinetics after Cs deposition. A spectral proof of the PETE process is obtained under thermal cycling of the Cs/GaAs surface with 0.45 monolayer (ML) of Cs.",

keywords = "Cesium, GaAs surface, Photoemission, Photon-enhanced thermionic emission, Solar energy conversion, ENERGY, INTERFACE, CESIUM",

author = "Zhuravlev, {A. G.} and Alperovich, {V. L.}",

year = "2017",

month = feb,

day = "15",

doi = "10.1016/j.apsusc.2016.05.057",

language = "English",

volume = "395",

pages = "3--8",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

}

Temperature dependence of photon-enhanced thermionic emission from GaAs surface with nonequilibrium Cs overlayers. / Zhuravlev, A. G.; Alperovich, V. L.

В: Applied Surface Science, Том 395, 15.02.2017, стр. 3-8.

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

TY - JOUR

T1 - Temperature dependence of photon-enhanced thermionic emission from GaAs surface with nonequilibrium Cs overlayers

AU - Zhuravlev, A. G.

AU - Alperovich, V. L.

PY - 2017/2/15

Y1 - 2017/2/15

N2 - The temperature influence on the Cs/GaAs surface electronic properties, which determine the photon-enhanced thermionic emission (PETE), is studied. It was found that heating to moderate temperatures of about 100 °С leads to substantial changes in the magnitude and shape of Cs coverage dependences of photoemission current and surface band bending, along with the changes of relaxation kinetics after Cs deposition. A spectral proof of the PETE process is obtained under thermal cycling of the Cs/GaAs surface with 0.45 monolayer (ML) of Cs.

AB - The temperature influence on the Cs/GaAs surface electronic properties, which determine the photon-enhanced thermionic emission (PETE), is studied. It was found that heating to moderate temperatures of about 100 °С leads to substantial changes in the magnitude and shape of Cs coverage dependences of photoemission current and surface band bending, along with the changes of relaxation kinetics after Cs deposition. A spectral proof of the PETE process is obtained under thermal cycling of the Cs/GaAs surface with 0.45 monolayer (ML) of Cs.

KW - Cesium

KW - GaAs surface

KW - Photoemission

KW - Photon-enhanced thermionic emission

KW - Solar energy conversion

KW - ENERGY

KW - INTERFACE

KW - CESIUM

UR - http://www.scopus.com/inward/record.url?scp=84971624267&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2016.05.057

DO - 10.1016/j.apsusc.2016.05.057

M3 - Article

AN - SCOPUS:84971624267

VL - 395

SP - 3

EP - 8

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

ER -