Temperature dependence of photon-enhanced thermionic emission from GaAs surface with nonequilibrium Cs overlayers

Результат исследования: Научные публикации в периодических изданияхстатья

9 Цитирования (Scopus)

Аннотация

The temperature influence on the Cs/GaAs surface electronic properties, which determine the photon-enhanced thermionic emission (PETE), is studied. It was found that heating to moderate temperatures of about 100 °С leads to substantial changes in the magnitude and shape of Cs coverage dependences of photoemission current and surface band bending, along with the changes of relaxation kinetics after Cs deposition. A spectral proof of the PETE process is obtained under thermal cycling of the Cs/GaAs surface with 0.45 monolayer (ML) of Cs.

Язык оригиналаанглийский
Страницы (с-по)3-8
Число страниц6
ЖурналApplied Surface Science
Том395
DOI
СостояниеОпубликовано - 15 фев 2017

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