We performed numerical simulations of plasmonic near-field enhancement in Si-based structures in near infrared region. Gold films perforated with periodic two-dimensional subwavelength hole arrays were used as the plasmonic couplers. The array periodicity was adjusted to excite the surface plasmon modes at the telecom wavelengths (between 1.3 and 1.55 μm). The field intensity enhancement factor and its spectral position, as a function of hole diameter, demonstrate the maximum at which the Bloch plasmon polariton waves propagating along the Au–Si interface change by a localized surface plasmon mode. The maximum peak wavelength and field intensity enhancement are reached at d/a = 0.5, where d is the hole diameter and a is the array periodicity. An over 14 times field intensity enhancement was obtained at λ = 1.54 μm for d = 200 nm and a = 400 nm. We found that the localized surface plasmon mode is confined mainly under the Au regions along the diagonals of the square lattice of holes. The lateral field distribution for propagating modes has either a hexagonal or square shape, reflecting in-pane symmetry of the grating. For structures with largest holes, the anticrossing of localized mode with the propagating one was observed implying coupling between the modes and formation of a mixed near-field state. The information acquired from the study is valuable for feasible device applications.
|Журнал||Photonics and Nanostructures - Fundamentals and Applications|
|Состояние||Опубликовано - июл 2020|