Synthesis of Epitaxial Structures with Two-Dimensional Si Layers Embedded in a CaF2 Dielectric Matrix

V. A. Zinovyev, A. F. Zinovieva, V. A. Volodin, A. K. Gutakovskii, A. S. Deryabin, A. Yu Krupin, L. V. Kulik, V. D. Zhivulko, A. V. Mudryi, A. V. Dvurechenskii

Результат исследования: Научные публикации в периодических изданияхстатьярецензирование


The possibility of fabricating two-dimensional Si layers on a CaF2/Si(111) film by molecular beam epitaxy is studied. The growth conditions, under which the regions of two-dimensional Si layers are formed, are found. Raman spectroscopy, transmission electron microscopy, photoluminescence, and electron paramagnetic resonance (EPR) studies have shown that regions of two-dimensional Si layers are formed in epitaxial structures prepared by the deposition of one to three biatomic Si layers on the CaF2/Si(111) film surface at a temperature of 550°С. The Raman spectra of these structures exhibit a narrow peak at 418 cm–1, which is due to light scattering on vibrations of Si atoms in the plane of a two-dimensional Si layer intercalated with calcium. The EPR spectra of multilayer structures with regions of two-dimensional Si layers embedded in CaF2 demonstrate an isotropic signal with an asymmetric Dyson shape and the g-factor g = 1.9992 under illumination. Consequently, this signal can be attributed to photoinduced conduction electrons in extended two-dimensional Si islands. These results may be useful for understanding the mechanisms of the formation of two-dimensional materials on CaF2/Si(111) substrates.

Язык оригиналаанглийский
Страницы (с-по)628-633
Число страниц6
ЖурналJETP Letters
Номер выпуска9
СостояниеОпубликовано - нояб. 2022

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