Swift heavy ion stimulated formation of the Si quantum dots in Si/SiO 2 multilayer heterostructures

G. N. Kamaev, S. G. Cherkova, A. A. Gismatulin, V. A. Volodin, V. A. Skuratov

Результат исследования: Публикации в книгах, отчётах, сборниках, трудах конференцийстатья в сборнике материалов конференциинаучнаярецензирование

Аннотация

In the present study, we experimentally examined the effect of swift Xe ion irradiation of multilayer structures involving ultrathin alternating layers of SiO 2 and amorphous hydrogenated silicon (α-Si:H), and subsequent isochronal anneals of such structures, on their properties. It is shown that the action of swift heavy ions on Si/SiO 2 multilayer structures leads to the formation of Si nanoclusters. In the latter case, the multi-layer structure of the samples was retained, and the ordering of nanoclusters along ion tracks was observed. The irradiation produces nuclei which, during subsequent anneals, facilitate the formation of Si nanocrystals (Si NCs) in the dielectric layer. In the multi-layer metal-oxide-semiconductor (MOS) structures with Si NCs embedded in the dielectric matrix, a phenomenon of bipolar resistive switching was observed. On increasing the number of NC layers, during the on-off process intermediate metastable states were manifested. This observation may prove important for realization of intermediate resistance values (multi-bit data storage) and for the development of additive neuromorphic systems.

Язык оригиналаанглийский
Название основной публикацииInternational Conference on Micro- and Nano-Electronics 2018
РедакторыVladimir F. Lukichev, Konstantin V. Rudenko
ИздательSPIE
Число страниц6
Том11022
ISBN (электронное издание)9781510627093
DOI
СостояниеОпубликовано - 1 янв 2019
СобытиеInternational Conference on Micro- and Nano-Electronics 2018, ICMNE 2018 - Zvenigorod, Российская Федерация
Продолжительность: 1 окт 20185 окт 2018

Серия публикаций

НазваниеProceedings of SPIE
ИздательSPIE-INT SOC OPTICAL ENGINEERING
Том11022
ISSN (печатное издание)0277-786X

Конференция

КонференцияInternational Conference on Micro- and Nano-Electronics 2018, ICMNE 2018
СтранаРоссийская Федерация
ГородZvenigorod
Период01.10.201805.10.2018

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  • Цитировать

    Kamaev, G. N., Cherkova, S. G., Gismatulin, A. A., Volodin, V. A., & Skuratov, V. A. (2019). Swift heavy ion stimulated formation of the Si quantum dots in Si/SiO 2 multilayer heterostructures. В V. F. Lukichev, & K. V. Rudenko (Ред.), International Conference on Micro- and Nano-Electronics 2018 (Том 11022). [1102213] (Proceedings of SPIE; Том 11022). SPIE. https://doi.org/10.1117/12.2522161