Аннотация
In this work, we investigate variations of surface potentials along a single gallium phosphide (GaP) nanowire (NW) synthesized with a mixed crystal phase along the growth direction. GaP NWs synthesized with both wurtzite (WZ) and zincblende (ZB) phases were studied. The measurements were performed on a standard Atomic Force Microscopy (AFM) set-up equipped with Kelvin Probe Force Microscopy (KPFM) module in PeakForce Tapping Mode. KPFM Measurements from two structures were analyzed. Variations of surface poten-tials were observed in a single GaP NW with WZ/ZB segments. An average difference in surface potential was 55±11 mV. This is explained by different crystal structures along the NW. The work expands the understanding of crystal structure-dependent electrical transport properties of GaP NWs.
Переведенное название | Поверхностный электрический потенциал GaP нанопроводов со смешанным кристаллическим составом |
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Язык оригинала | английский |
Номер статьи | 044018 |
Число страниц | 6 |
Журнал | Journal of Physics: Conference Series |
Том | 1400 |
Номер выпуска | 4 |
DOI | |
Состояние | Опубликовано - 11 дек. 2019 |
Событие | International Conference PhysicA.SPb 2019 - Saint Petersburg, Российская Федерация Продолжительность: 22 окт. 2019 → 24 окт. 2019 |