Surface potential response from GaP nanowires synthesized with mixed crystal phases

B. Kyeyune; E. Soboleva; P. Geydt; V. Khayrudinov; P. Alekseev; H. Lipsanen; E. Lähderanta

doi:10.1088/1742-6596/1400/4/044018

Surface potential response from GaP nanowires synthesized with mixed crystal phases

Переведенное название: Поверхностный электрический потенциал GaP нанопроводов со смешанным кристаллическим составом

B. Kyeyune, E. Soboleva, P. Geydt, V. Khayrudinov, P. Alekseev, H. Lipsanen, E. Lähderanta

Аналитический и технологический исследовательский центр "Высокие технологии и наноструктурированные материалы" ФФ
Кафедра физических методов исследования твердого тела ФФ

Результат исследования: Научные публикации в периодических изданиях › статья по материалам конференции › рецензирование

1 Цитирования (Scopus)

Аннотация

In this work, we investigate variations of surface potentials along a single gallium phosphide (GaP) nanowire (NW) synthesized with a mixed crystal phase along the growth direction. GaP NWs synthesized with both wurtzite (WZ) and zincblende (ZB) phases were studied. The measurements were performed on a standard Atomic Force Microscopy (AFM) set-up equipped with Kelvin Probe Force Microscopy (KPFM) module in PeakForce Tapping Mode. KPFM Measurements from two structures were analyzed. Variations of surface poten-tials were observed in a single GaP NW with WZ/ZB segments. An average difference in surface potential was 55±11 mV. This is explained by different crystal structures along the NW. The work expands the understanding of crystal structure-dependent electrical transport properties of GaP NWs.

Переведенное название	Поверхностный электрический потенциал GaP нанопроводов со смешанным кристаллическим составом
Язык оригинала	английский
Номер статьи	044018
Число страниц	6
Журнал	Journal of Physics: Conference Series
Том	1400
Номер выпуска	4
DOI	https://doi.org/10.1088/1742-6596/1400/4/044018
Состояние	Опубликовано - 11 дек. 2019
Событие	International Conference PhysicA.SPb 2019 - Saint Petersburg, Российская Федерация Продолжительность: 22 окт. 2019 → 24 окт. 2019

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10.1088/1742-6596/1400/4/044018

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@article{8705380d31624488b0bedc8c61812fe5,

title = "Surface potential response from GaP nanowires synthesized with mixed crystal phases",

abstract = "In this work, we investigate variations of surface potentials along a single gallium phosphide (GaP) nanowire (NW) synthesized with a mixed crystal phase along the growth direction. GaP NWs synthesized with both wurtzite (WZ) and zincblende (ZB) phases were studied. The measurements were performed on a standard Atomic Force Microscopy (AFM) set-up equipped with Kelvin Probe Force Microscopy (KPFM) module in PeakForce Tapping Mode. KPFM Measurements from two structures were analyzed. Variations of surface poten-tials were observed in a single GaP NW with WZ/ZB segments. An average difference in surface potential was 55±11 mV. This is explained by different crystal structures along the NW. The work expands the understanding of crystal structure-dependent electrical transport properties of GaP NWs.",

keywords = "Atomic Force Microscopy (AFM), Nanowires (NWs), Kelvin Probe Force Microscopy (KPFM), Wurzite (WZ), Zincblende (ZB), Gallium phosphide (GaP), WURTZITE",

author = "B. Kyeyune and E. Soboleva and P. Geydt and V. Khayrudinov and P. Alekseev and H. Lipsanen and E. L{\"a}hderanta",

year = "2019",

month = dec,

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doi = "10.1088/1742-6596/1400/4/044018",

language = "English",

volume = "1400",

journal = "Journal of Physics: Conference Series",

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note = "International Conference PhysicA.SPb 2019 ; Conference date: 22-10-2019 Through 24-10-2019",

}

Surface potential response from GaP nanowires synthesized with mixed crystal phases. / Kyeyune, B.; Soboleva, E.; Geydt, P. и др.

В: Journal of Physics: Conference Series, Том 1400, № 4, 044018, 11.12.2019.

Результат исследования: Научные публикации в периодических изданиях › статья по материалам конференции › рецензирование

TY - JOUR

T1 - Surface potential response from GaP nanowires synthesized with mixed crystal phases

AU - Kyeyune, B.

AU - Soboleva, E.

AU - Geydt, P.

AU - Khayrudinov, V.

AU - Alekseev, P.

AU - Lipsanen, H.

AU - Lähderanta, E.

PY - 2019/12/11

Y1 - 2019/12/11

N2 - In this work, we investigate variations of surface potentials along a single gallium phosphide (GaP) nanowire (NW) synthesized with a mixed crystal phase along the growth direction. GaP NWs synthesized with both wurtzite (WZ) and zincblende (ZB) phases were studied. The measurements were performed on a standard Atomic Force Microscopy (AFM) set-up equipped with Kelvin Probe Force Microscopy (KPFM) module in PeakForce Tapping Mode. KPFM Measurements from two structures were analyzed. Variations of surface poten-tials were observed in a single GaP NW with WZ/ZB segments. An average difference in surface potential was 55±11 mV. This is explained by different crystal structures along the NW. The work expands the understanding of crystal structure-dependent electrical transport properties of GaP NWs.

AB - In this work, we investigate variations of surface potentials along a single gallium phosphide (GaP) nanowire (NW) synthesized with a mixed crystal phase along the growth direction. GaP NWs synthesized with both wurtzite (WZ) and zincblende (ZB) phases were studied. The measurements were performed on a standard Atomic Force Microscopy (AFM) set-up equipped with Kelvin Probe Force Microscopy (KPFM) module in PeakForce Tapping Mode. KPFM Measurements from two structures were analyzed. Variations of surface poten-tials were observed in a single GaP NW with WZ/ZB segments. An average difference in surface potential was 55±11 mV. This is explained by different crystal structures along the NW. The work expands the understanding of crystal structure-dependent electrical transport properties of GaP NWs.

KW - Atomic Force Microscopy (AFM)

KW - Nanowires (NWs)

KW - Kelvin Probe Force Microscopy (KPFM)

KW - Wurzite (WZ)

KW - Zincblende (ZB)

KW - Gallium phosphide (GaP)

KW - WURTZITE

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U2 - 10.1088/1742-6596/1400/4/044018

DO - 10.1088/1742-6596/1400/4/044018

M3 - Conference article

AN - SCOPUS:85077590690

VL - 1400

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

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T2 - International Conference PhysicA.SPb 2019

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