Surface Polaritons in Silicon-Doped Aluminum and Gallium Nitride Films

N. N. Novikova; V. A. Yakovlev; S. A. Klimin; T. V. Malin; A. M. Gilinsky; K. S. Zhuravlev

doi:10.1134/S0030400X19070208

Surface Polaritons in Silicon-Doped Aluminum and Gallium Nitride Films

N. N. Novikova, V. A. Yakovlev, S. A. Klimin, T. V. Malin, A. M. Gilinsky, K. S. Zhuravlev

Лаборатория полупроводниковых и диэлектрических материалов ФФ

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

Аннотация

Abstract: The reflection and attenuated total reflection spectra of aluminum and gallium nitride films doped with silicon on sapphire substrates with a buffer layer of aluminum nitride have been measured. In the spectra of attenuated total reflection, surface phonon and plasmon–phonon polaritons were observed. A high concentration of charge carriers in the gallium nitride film and their practical absence in the aluminum nitride film were experimentally observed.

Язык оригинала	английский
Страницы (с-по)	36-39
Число страниц	4
Журнал	Optics and Spectroscopy
Том	127
Номер выпуска	1
DOI	https://doi.org/10.1134/S0030400X19070208
Состояние	Опубликовано - 1 июл 2019

Доступ к документу

10.1134/S0030400X19070208

Link to publication in Scopus

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Surface Polaritons in Silicon-Doped Aluminum and Gallium Nitride Films. / Novikova, N. N.; Yakovlev, V. A.; Klimin, S. A.; Malin, T. V.; Gilinsky, A. M.; Zhuravlev, K. S.

В: Optics and Spectroscopy, Том 127, № 1, 01.07.2019, стр. 36-39.

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

TY - JOUR

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AU - Novikova, N. N.

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AU - Klimin, S. A.

AU - Malin, T. V.

AU - Gilinsky, A. M.

AU - Zhuravlev, K. S.

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N2 - Abstract: The reflection and attenuated total reflection spectra of aluminum and gallium nitride films doped with silicon on sapphire substrates with a buffer layer of aluminum nitride have been measured. In the spectra of attenuated total reflection, surface phonon and plasmon–phonon polaritons were observed. A high concentration of charge carriers in the gallium nitride film and their practical absence in the aluminum nitride film were experimentally observed.

AB - Abstract: The reflection and attenuated total reflection spectra of aluminum and gallium nitride films doped with silicon on sapphire substrates with a buffer layer of aluminum nitride have been measured. In the spectra of attenuated total reflection, surface phonon and plasmon–phonon polaritons were observed. A high concentration of charge carriers in the gallium nitride film and their practical absence in the aluminum nitride film were experimentally observed.

KW - aluminum and gallium nitrides

KW - reflection and ATR spectroscopy

KW - surface polaritons

KW - VIBRATIONS

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