Surface Polaritons in Silicon-Doped Aluminum and Gallium Nitride Films

N. N. Novikova, V. A. Yakovlev, S. A. Klimin, T. V. Malin, A. M. Gilinsky, K. S. Zhuravlev

Результат исследования: Научные публикации в периодических изданияхстатья

Аннотация

Abstract: The reflection and attenuated total reflection spectra of aluminum and gallium nitride films doped with silicon on sapphire substrates with a buffer layer of aluminum nitride have been measured. In the spectra of attenuated total reflection, surface phonon and plasmon–phonon polaritons were observed. A high concentration of charge carriers in the gallium nitride film and their practical absence in the aluminum nitride film were experimentally observed.

Язык оригиналаанглийский
Страницы (с-по)36-39
Число страниц4
ЖурналOptics and Spectroscopy
Том127
Номер выпуска1
DOI
СостояниеОпубликовано - 1 июл 2019

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Novikova, N. N., Yakovlev, V. A., Klimin, S. A., Malin, T. V., Gilinsky, A. M., & Zhuravlev, K. S. (2019). Surface Polaritons in Silicon-Doped Aluminum and Gallium Nitride Films. Optics and Spectroscopy, 127(1), 36-39. https://doi.org/10.1134/S0030400X19070208