Аннотация
Abstract: The reflection and attenuated total reflection spectra of aluminum and gallium nitride films doped with silicon on sapphire substrates with a buffer layer of aluminum nitride have been measured. In the spectra of attenuated total reflection, surface phonon and plasmon–phonon polaritons were observed. A high concentration of charge carriers in the gallium nitride film and their practical absence in the aluminum nitride film were experimentally observed.
Язык оригинала | английский |
---|---|
Страницы (с-по) | 36-39 |
Число страниц | 4 |
Журнал | Optics and Spectroscopy |
Том | 127 |
Номер выпуска | 1 |
DOI | |
Состояние | Опубликовано - 1 июл. 2019 |