Surface photovoltage in a p-GaN(Cs) photocathode

S. A. Rozhkov; V. V. Bakin; D. V. Gorshkov; S. N. Kosolobov; H. E. Scheibler

doi:10.1088/1742-6596/1199/1/012031

Surface photovoltage in a p-GaN(Cs) photocathode

S. A. Rozhkov, V. V. Bakin, D. V. Gorshkov, S. N. Kosolobov, H. E. Scheibler

Результат исследования: Научные публикации в периодических изданиях › статья по материалам конференции › рецензирование

2 Цитирования (Scopus)

Аннотация

Temperature and optical power density dependences of the photovoltage at a p-GaN(Cs) photocathode surface were measured in the temperature range 90-295 K. The study demonstrated that band bending at the p-GaN(Cs) photocathode surface can be reduced by ∼ 0.5 eV without modifying the surface atomic structure. The surface photovoltage impact on the p-GaN(Cs) photocathode quantum efficiency and photoelectron energy distributions was analyzed.

Язык оригинала	английский
Номер статьи	012031
Журнал	Journal of Physics: Conference Series
Том	1199
Номер выпуска	1
DOI	https://doi.org/10.1088/1742-6596/1199/1/012031
Состояние	Опубликовано - 17 апр. 2019
Событие	20th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Optoand Nanoelectronics, RYCPS 2018 - St. Petersburg, Российская Федерация Продолжительность: 26 нояб. 2018 → 30 нояб. 2018

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10.1088/1742-6596/1199/1/012031

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title = "Surface photovoltage in a p-GaN(Cs) photocathode",

abstract = "Temperature and optical power density dependences of the photovoltage at a p-GaN(Cs) photocathode surface were measured in the temperature range 90-295 K. The study demonstrated that band bending at the p-GaN(Cs) photocathode surface can be reduced by ∼ 0.5 eV without modifying the surface atomic structure. The surface photovoltage impact on the p-GaN(Cs) photocathode quantum efficiency and photoelectron energy distributions was analyzed.",

author = "Rozhkov, {S. A.} and Bakin, {V. V.} and Gorshkov, {D. V.} and Kosolobov, {S. N.} and Scheibler, {H. E.}",

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Surface photovoltage in a p-GaN(Cs) photocathode. / Rozhkov, S. A.; Bakin, V. V.; Gorshkov, D. V. и др.

В: Journal of Physics: Conference Series, Том 1199, № 1, 012031, 17.04.2019.

Результат исследования: Научные публикации в периодических изданиях › статья по материалам конференции › рецензирование

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T1 - Surface photovoltage in a p-GaN(Cs) photocathode

AU - Rozhkov, S. A.

AU - Bakin, V. V.

AU - Gorshkov, D. V.

AU - Kosolobov, S. N.

AU - Scheibler, H. E.

PY - 2019/4/17

Y1 - 2019/4/17

N2 - Temperature and optical power density dependences of the photovoltage at a p-GaN(Cs) photocathode surface were measured in the temperature range 90-295 K. The study demonstrated that band bending at the p-GaN(Cs) photocathode surface can be reduced by ∼ 0.5 eV without modifying the surface atomic structure. The surface photovoltage impact on the p-GaN(Cs) photocathode quantum efficiency and photoelectron energy distributions was analyzed.

AB - Temperature and optical power density dependences of the photovoltage at a p-GaN(Cs) photocathode surface were measured in the temperature range 90-295 K. The study demonstrated that band bending at the p-GaN(Cs) photocathode surface can be reduced by ∼ 0.5 eV without modifying the surface atomic structure. The surface photovoltage impact on the p-GaN(Cs) photocathode quantum efficiency and photoelectron energy distributions was analyzed.

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U2 - 10.1088/1742-6596/1199/1/012031

DO - 10.1088/1742-6596/1199/1/012031

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VL - 1199

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

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T2 - 20th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Optoand Nanoelectronics, RYCPS 2018

Y2 - 26 November 2018 through 30 November 2018

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Surface photovoltage in a p-GaN(Cs) photocathode

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