Surface Сonductivity Dynamics in PbSnTe:In Films in the Vicinity of a Band Inversion: In Films in the Vicinity of a Band Inversion

A. E. Klimov, A. N. Akimov, I. O. Akhundov, V. A. Golyashov, D. V. Gorshkov, D. V. Ishchenko, G. Yu Sidorov, S. P. Suprun, A. S. Tarasov, V. S. Epov, O. E. Tereshchenko

Результат исследования: Научные публикации в периодических изданияхстатья

Аннотация

The features of transient processes under the field effect in PbSnTe:In films with a variation in the current up to a factor of 10(5) are studied at helium temperatures. These features qualitatively correspond to a model, in which a high concentration of traps with different parameters is present on the PbSnTe:In surface. The role of the surface is confirmed by a strong variation in the experimental characteristic after the chemical removal of native oxides from the PbSnTe:In surface and its passivation by an Al2O3 layer.

Язык оригиналаанглийский
Страницы (с-по)1182-1186
Число страниц5
ЖурналSemiconductors
Том53
Номер выпуска9
DOI
СостояниеОпубликовано - 1 сен 2019

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