Аннотация
The features of transient processes under the field effect in PbSnTe:In films with a variation in the current up to a factor of 10(5) are studied at helium temperatures. These features qualitatively correspond to a model, in which a high concentration of traps with different parameters is present on the PbSnTe:In surface. The role of the surface is confirmed by a strong variation in the experimental characteristic after the chemical removal of native oxides from the PbSnTe:In surface and its passivation by an Al2O3 layer.
Язык оригинала | английский |
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Страницы (с-по) | 1182-1186 |
Число страниц | 5 |
Журнал | Semiconductors |
Том | 53 |
Номер выпуска | 9 |
DOI | |
Состояние | Опубликовано - 1 сен 2019 |