Surface Сonductivity Dynamics in PbSnTe:In Films in the Vicinity of a Band Inversion: In Films in the Vicinity of a Band Inversion

A. E. Klimov; A. N. Akimov; I. O. Akhundov; V. A. Golyashov; D. V. Gorshkov; D. V. Ishchenko; G. Yu Sidorov; S. P. Suprun; A. S. Tarasov; V. S. Epov; O. E. Tereshchenko

doi:10.1134/S1063782619090094

Surface Сonductivity Dynamics in PbSnTe:In Films in the Vicinity of a Band Inversion: In Films in the Vicinity of a Band Inversion

A. E. Klimov, A. N. Akimov, I. O. Akhundov, V. A. Golyashov, D. V. Gorshkov, D. V. Ishchenko, G. Yu Sidorov, S. P. Suprun, A. S. Tarasov, V. S. Epov, O. E. Tereshchenko

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

1 Цитирования (Scopus)

Аннотация

The features of transient processes under the field effect in PbSnTe:In films with a variation in the current up to a factor of 10(5) are studied at helium temperatures. These features qualitatively correspond to a model, in which a high concentration of traps with different parameters is present on the PbSnTe:In surface. The role of the surface is confirmed by a strong variation in the experimental characteristic after the chemical removal of native oxides from the PbSnTe:In surface and its passivation by an Al2O3 layer.

Язык оригинала	английский
Страницы (с-по)	1182-1186
Число страниц	5
Журнал	Semiconductors
Том	53
Номер выпуска	9
DOI	https://doi.org/10.1134/S1063782619090094
Состояние	Опубликовано - 1 сен 2019

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10.1134/S1063782619090094

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Klimov, A. E., Akimov, A. N., Akhundov, I. O., Golyashov, V. A., Gorshkov, D. V., Ishchenko, D. V., Sidorov, G. Y., Suprun, S. P., Tarasov, A. S., Epov, V. S., & Tereshchenko, O. E. (2019). Surface Сonductivity Dynamics in PbSnTe:In Films in the Vicinity of a Band Inversion: In Films in the Vicinity of a Band Inversion. Semiconductors, 53(9), 1182-1186. https://doi.org/10.1134/S1063782619090094

Klimov, A. E. ; Akimov, A. N. ; Akhundov, I. O. ; Golyashov, V. A. ; Gorshkov, D. V. ; Ishchenko, D. V. ; Sidorov, G. Yu ; Suprun, S. P. ; Tarasov, A. S. ; Epov, V. S. ; Tereshchenko, O. E. / Surface Сonductivity Dynamics in PbSnTe:In Films in the Vicinity of a Band Inversion : In Films in the Vicinity of a Band Inversion. В: Semiconductors. 2019 ; Том 53, № 9. стр. 1182-1186.

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title = "Surface Сonductivity Dynamics in PbSnTe:In Films in the Vicinity of a Band Inversion: In Films in the Vicinity of a Band Inversion",

abstract = "The features of transient processes under the field effect in PbSnTe:In films with a variation in the current up to a factor of 10(5) are studied at helium temperatures. These features qualitatively correspond to a model, in which a high concentration of traps with different parameters is present on the PbSnTe:In surface. The role of the surface is confirmed by a strong variation in the experimental characteristic after the chemical removal of native oxides from the PbSnTe:In surface and its passivation by an Al2O3 layer.",

keywords = "field effect, MIS structure, PbSnTe:In solid solution, surface conductivity, PbSnTe, In solid solution",

author = "Klimov, {A. E.} and Akimov, {A. N.} and Akhundov, {I. O.} and Golyashov, {V. A.} and Gorshkov, {D. V.} and Ishchenko, {D. V.} and Sidorov, {G. Yu} and Suprun, {S. P.} and Tarasov, {A. S.} and Epov, {V. S.} and Tereshchenko, {O. E.}",

year = "2019",

month = sep,

day = "1",

doi = "10.1134/S1063782619090094",

language = "English",

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Klimov, AE, Akimov, AN, Akhundov, IO, Golyashov, VA , Gorshkov, DV, Ishchenko, DV, Sidorov, GY, Suprun, SP, Tarasov, AS, Epov, VS & Tereshchenko, OE 2019, 'Surface Сonductivity Dynamics in PbSnTe:In Films in the Vicinity of a Band Inversion: In Films in the Vicinity of a Band Inversion', Semiconductors, том. 53, № 9, стр. 1182-1186. https://doi.org/10.1134/S1063782619090094

Surface Сonductivity Dynamics in PbSnTe:In Films in the Vicinity of a Band Inversion : In Films in the Vicinity of a Band Inversion. / Klimov, A. E.; Akimov, A. N.; Akhundov, I. O.; Golyashov, V. A.; Gorshkov, D. V.; Ishchenko, D. V.; Sidorov, G. Yu; Suprun, S. P.; Tarasov, A. S.; Epov, V. S.; Tereshchenko, O. E.

В: Semiconductors, Том 53, № 9, 01.09.2019, стр. 1182-1186.

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

TY - JOUR

T1 - Surface Сonductivity Dynamics in PbSnTe:In Films in the Vicinity of a Band Inversion

T2 - In Films in the Vicinity of a Band Inversion

AU - Klimov, A. E.

AU - Akimov, A. N.

AU - Akhundov, I. O.

AU - Golyashov, V. A.

AU - Gorshkov, D. V.

AU - Ishchenko, D. V.

AU - Sidorov, G. Yu

AU - Suprun, S. P.

AU - Tarasov, A. S.

AU - Epov, V. S.

AU - Tereshchenko, O. E.

PY - 2019/9/1

Y1 - 2019/9/1

N2 - The features of transient processes under the field effect in PbSnTe:In films with a variation in the current up to a factor of 10(5) are studied at helium temperatures. These features qualitatively correspond to a model, in which a high concentration of traps with different parameters is present on the PbSnTe:In surface. The role of the surface is confirmed by a strong variation in the experimental characteristic after the chemical removal of native oxides from the PbSnTe:In surface and its passivation by an Al2O3 layer.

AB - The features of transient processes under the field effect in PbSnTe:In films with a variation in the current up to a factor of 10(5) are studied at helium temperatures. These features qualitatively correspond to a model, in which a high concentration of traps with different parameters is present on the PbSnTe:In surface. The role of the surface is confirmed by a strong variation in the experimental characteristic after the chemical removal of native oxides from the PbSnTe:In surface and its passivation by an Al2O3 layer.

KW - field effect

KW - MIS structure

KW - PbSnTe:In solid solution

KW - surface conductivity

KW - PbSnTe

KW - In solid solution

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JO - Semiconductors

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