Changes in the structure and elemental composition of the surface of the epitaxy-ready InP(001) substrate in an As flux in ultrahigh vacuum are studied in situ by the reflection high-energy electron diffraction (RHEED) technique. It is shown that, during annealing of the oxide layer at the surface, an InP1 –xAsx layer is formed as a result of the substitution of phosphorus by arsenic. The dependence of the degree of substitution on the annealing temperature and time is established. The degree of the substitution of phosphorus by arsenic in the surface layer is 7% at the annealing temperature 480°C and, reaches 41% at the temperature 540°C. The annealing time influences the degree of substitution only slightly.
Предметные области OECD FOS+WOS
- 2.05 ТЕХНОЛОГИЯ МАТЕРИАЛОВ
- 1.03 ФИЗИЧЕСКИЕ НАУКИ И АСТРОНОМИЯ