Аннотация

Abstract: Composites consisting of Ge nanoclusters embedded in GeO2 matrix were modified by selective removal of the germanium dioxide in deionized water or HF. Thin (up to 200 nm) and thick (300−1500 nm) GeO2{Ge-NCs} heterolayers were studied before and after the etching using Raman spectroscopy, scanning and spectral ellipsometry, scanning electron microscopy. It was found that a stable skeletal framework from agglomerated Ge nanoparticles (amorphous or crystalline) was formed after the etching of thin GeO2{Ge-NCs} heterolayers. When removal the GeO2 matrix from a thick GeO2{Ge-NCs} heterolayer, released Ge nanoclusters were arranged in a vertically ordered chains.

Язык оригиналаанглийский
Страницы (с-по)2064-2067
Число страниц4
ЖурналSemiconductors
Том53
Номер выпуска16
DOI
СостояниеОпубликовано - 1 дек 2019

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