Study of structural and optical properties of a dual-band material based on tin oxides and GeSiSn compounds

Vyacheslav A. Timofeev; Vladimir I. Mashanov; Alexandr I. Nikiforov; Ivan D. Loshkarev; Dmitry V. Gulyaev; Vladimir A. Volodin; Anton S. Kozhukhov; Oleg S. Komkov; Dmitry D. Firsov; Ilya V. Korolkov

doi:10.1016/j.apsusc.2021.151615

Study of structural and optical properties of a dual-band material based on tin oxides and GeSiSn compounds

Vyacheslav A. Timofeev, Vladimir I. Mashanov, Alexandr I. Nikiforov, Ivan D. Loshkarev, Dmitry V. Gulyaev, Vladimir A. Volodin, Anton S. Kozhukhov, Oleg S. Komkov, Dmitry D. Firsov, Ilya V. Korolkov

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

Аннотация

The phase transitions during the oxidation of polycrystalline tin (β-Sn) were studied. The intense photoluminescence from SnO was observed in the annealing temperature range of 300–400 °C. An increase in the annealing temperature led to a sharp decrease in photoluminescence. It is associated with the phase transition of SnO to SnO₂. Two approaches were proposed for obtaining the dual-band material based on tin oxides and GeSiSn compounds. Using the Sn-rich nanoislands grown on the vapor–liquid-solid (VLS) mechanism, the nanoislands having SnO(x) in their upper part, and the SiSn solid solution under SnO(x) were obtained after annealing. Furthermore, the growth technology of the dual-band material, which included tin oxides on top of a GeSiSn/Si multiple quantum well (MQW) structure, was developed. Tin oxides demonstrated the photoluminescence signal in the visible region, whereas the SiSn solid solution in nanoislands and GeSiSn/Si multiple quantum well structure showed the photoluminescence signal in the infrared range.

Язык оригинала	английский
Номер статьи	151615
Журнал	Applied Surface Science
Том	573
DOI	https://doi.org/10.1016/j.apsusc.2021.151615
Состояние	Опубликовано - 30 янв. 2022

Предметные области OECD FOS+WOS

2.05 ТЕХНОЛОГИЯ МАТЕРИАЛОВ
1.03 ФИЗИЧЕСКИЕ НАУКИ И АСТРОНОМИЯ
1.04 ХИМИЧЕСКИЕ НАУКИ

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10.1016/j.apsusc.2021.151615

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@article{90c69a23515248d7823829c428bf16ae,

title = "Study of structural and optical properties of a dual-band material based on tin oxides and GeSiSn compounds",

abstract = "The phase transitions during the oxidation of polycrystalline tin (β-Sn) were studied. The intense photoluminescence from SnO was observed in the annealing temperature range of 300–400 °C. An increase in the annealing temperature led to a sharp decrease in photoluminescence. It is associated with the phase transition of SnO to SnO2. Two approaches were proposed for obtaining the dual-band material based on tin oxides and GeSiSn compounds. Using the Sn-rich nanoislands grown on the vapor–liquid-solid (VLS) mechanism, the nanoislands having SnO(x) in their upper part, and the SiSn solid solution under SnO(x) were obtained after annealing. Furthermore, the growth technology of the dual-band material, which included tin oxides on top of a GeSiSn/Si multiple quantum well (MQW) structure, was developed. Tin oxides demonstrated the photoluminescence signal in the visible region, whereas the SiSn solid solution in nanoislands and GeSiSn/Si multiple quantum well structure showed the photoluminescence signal in the infrared range.",

keywords = "Dual-band material, Photoluminescence, Raman spectroscopy, Solid solution, Tin oxide, X-ray diffraction",

author = "Timofeev, {Vyacheslav A.} and Mashanov, {Vladimir I.} and Nikiforov, {Alexandr I.} and Loshkarev, {Ivan D.} and Gulyaev, {Dmitry V.} and Volodin, {Vladimir A.} and Kozhukhov, {Anton S.} and Komkov, {Oleg S.} and Firsov, {Dmitry D.} and Korolkov, {Ilya V.}",

note = "Funding Information: This work was supported by the Ministry of Science and Higher Education of the Russian Federation (Grant No. 075-15-2020-797 (13.1902.21.0024)). The SEM and AFM studies were carried out using the equipment of CCP “Nanostructures”. Publisher Copyright: {\textcopyright} 2021 Elsevier B.V.",

year = "2022",

month = jan,

day = "30",

doi = "10.1016/j.apsusc.2021.151615",

language = "English",

volume = "573",

journal = "Applied Surface Science",

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publisher = "Elsevier",

}

Study of structural and optical properties of a dual-band material based on tin oxides and GeSiSn compounds. / Timofeev, Vyacheslav A.; Mashanov, Vladimir I.; Nikiforov, Alexandr I. и др.

В: Applied Surface Science, Том 573, 151615, 30.01.2022.

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

TY - JOUR

T1 - Study of structural and optical properties of a dual-band material based on tin oxides and GeSiSn compounds

AU - Timofeev, Vyacheslav A.

AU - Mashanov, Vladimir I.

AU - Nikiforov, Alexandr I.

AU - Loshkarev, Ivan D.

AU - Gulyaev, Dmitry V.

AU - Volodin, Vladimir A.

AU - Kozhukhov, Anton S.

AU - Komkov, Oleg S.

AU - Firsov, Dmitry D.

AU - Korolkov, Ilya V.

N1 - Funding Information: This work was supported by the Ministry of Science and Higher Education of the Russian Federation (Grant No. 075-15-2020-797 (13.1902.21.0024)). The SEM and AFM studies were carried out using the equipment of CCP “Nanostructures”. Publisher Copyright: © 2021 Elsevier B.V.

PY - 2022/1/30

Y1 - 2022/1/30

N2 - The phase transitions during the oxidation of polycrystalline tin (β-Sn) were studied. The intense photoluminescence from SnO was observed in the annealing temperature range of 300–400 °C. An increase in the annealing temperature led to a sharp decrease in photoluminescence. It is associated with the phase transition of SnO to SnO2. Two approaches were proposed for obtaining the dual-band material based on tin oxides and GeSiSn compounds. Using the Sn-rich nanoislands grown on the vapor–liquid-solid (VLS) mechanism, the nanoislands having SnO(x) in their upper part, and the SiSn solid solution under SnO(x) were obtained after annealing. Furthermore, the growth technology of the dual-band material, which included tin oxides on top of a GeSiSn/Si multiple quantum well (MQW) structure, was developed. Tin oxides demonstrated the photoluminescence signal in the visible region, whereas the SiSn solid solution in nanoislands and GeSiSn/Si multiple quantum well structure showed the photoluminescence signal in the infrared range.

AB - The phase transitions during the oxidation of polycrystalline tin (β-Sn) were studied. The intense photoluminescence from SnO was observed in the annealing temperature range of 300–400 °C. An increase in the annealing temperature led to a sharp decrease in photoluminescence. It is associated with the phase transition of SnO to SnO2. Two approaches were proposed for obtaining the dual-band material based on tin oxides and GeSiSn compounds. Using the Sn-rich nanoislands grown on the vapor–liquid-solid (VLS) mechanism, the nanoislands having SnO(x) in their upper part, and the SiSn solid solution under SnO(x) were obtained after annealing. Furthermore, the growth technology of the dual-band material, which included tin oxides on top of a GeSiSn/Si multiple quantum well (MQW) structure, was developed. Tin oxides demonstrated the photoluminescence signal in the visible region, whereas the SiSn solid solution in nanoislands and GeSiSn/Si multiple quantum well structure showed the photoluminescence signal in the infrared range.

KW - Dual-band material

KW - Photoluminescence

KW - Raman spectroscopy

KW - Solid solution

KW - Tin oxide

KW - X-ray diffraction

UR - http://www.scopus.com/inward/record.url?scp=85122510808&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2021.151615

DO - 10.1016/j.apsusc.2021.151615

M3 - Article

AN - SCOPUS:85122510808

VL - 573

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

M1 - 151615

ER -