Structure of Hf                         
                        0.9
                                                 La                         
                        0.1
                                                 O                         
                        2
                                                  Ferroelectric Films Obtained by the Atomic Layer Deposition

T. V. Perevalov; V. A. Gritsenko; A. K. Gutakovskii; I. P. Prosvirin

doi:10.1134/S0021364019020115

Structure of Hf _0.9 La _0.1 O ₂ Ferroelectric Films Obtained by the Atomic Layer Deposition

T. V. Perevalov, V. A. Gritsenko, A. K. Gutakovskii, I. P. Prosvirin

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

1 Цитирования (Scopus)

Аннотация

Thin films of La-doped hafnium oxide synthesized by plasma-enhanced atomic layer deposition with subsequent rapid annealing have been studied. It has been found that the films under study have an orthorhombic noncentrosymmetric structure with the space group Pmn2 ₁ . It has been shown that these films have ferroelectric properties. The ratio of atomic concentrations of elements in a film has been determined. It has been found that the film consists of the mixture of the HfO ₂ and La ₂ O ₃ phases. It has been shown that argon ion etching results in the generation of oxygen vacancies with a concentration of about 1 at % in the surface region of the films. Vacancies are formed primarily through the knock-out of oxygen atoms to interstitial positions with the formation of a Frenkel pair.

Язык оригинала	английский
Страницы (с-по)	116-120
Число страниц	5
Журнал	JETP Letters
Том	109
Номер выпуска	2
DOI	https://doi.org/10.1134/S0021364019020115
Состояние	Опубликовано - 1 янв 2019

Доступ к документу

10.1134/S0021364019020115

Link to publication in Scopus

Fingerprint

Подробные сведения о темах исследования «Structure of Hf 0.9 La 0.1 O 2 Ferroelectric Films Obtained by the Atomic Layer Deposition». Вместе они формируют уникальный семантический отпечаток (fingerprint).

Цитировать

Perevalov, T. V., Gritsenko, V. A., Gutakovskii, A. K., & Prosvirin, I. P. (2019). Structure of Hf _0.9 La _0.1 O ₂ Ferroelectric Films Obtained by the Atomic Layer Deposition. JETP Letters, 109(2), 116-120. https://doi.org/10.1134/S0021364019020115

Perevalov, T. V. ; Gritsenko, V. A. ; Gutakovskii, A. K. ; Prosvirin, I. P. / Structure of Hf _0.9 La _0.1 O ₂ Ferroelectric Films Obtained by the Atomic Layer Deposition. В: JETP Letters. 2019 ; Том 109, № 2. стр. 116-120.

@article{fec0889daf9d4d0a9de052c2035bea79,

title = "Structure of Hf 0.9 La 0.1 O 2 Ferroelectric Films Obtained by the Atomic Layer Deposition",

abstract = " Thin films of La-doped hafnium oxide synthesized by plasma-enhanced atomic layer deposition with subsequent rapid annealing have been studied. It has been found that the films under study have an orthorhombic noncentrosymmetric structure with the space group Pmn2 1 . It has been shown that these films have ferroelectric properties. The ratio of atomic concentrations of elements in a film has been determined. It has been found that the film consists of the mixture of the HfO 2 and La 2 O 3 phases. It has been shown that argon ion etching results in the generation of oxygen vacancies with a concentration of about 1 at % in the surface region of the films. Vacancies are formed primarily through the knock-out of oxygen atoms to interstitial positions with the formation of a Frenkel pair. ",

author = "Perevalov, {T. V.} and Gritsenko, {V. A.} and Gutakovskii, {A. K.} and Prosvirin, {I. P.}",

year = "2019",

month = jan,

day = "1",

doi = "10.1134/S0021364019020115",

language = "English",

volume = "109",

pages = "116--120",

journal = "JETP Letters",

issn = "0021-3640",

publisher = "MAIK NAUKA/INTERPERIODICA/SPRINGER",

number = "2",

}

Perevalov, TV, Gritsenko, VA, Gutakovskii, AK & Prosvirin, IP 2019, 'Structure of Hf _0.9 La _0.1 O ₂ Ferroelectric Films Obtained by the Atomic Layer Deposition', JETP Letters, том. 109, № 2, стр. 116-120. https://doi.org/10.1134/S0021364019020115

Structure of Hf _0.9 La _0.1 O ₂ Ferroelectric Films Obtained by the Atomic Layer Deposition. / Perevalov, T. V.; Gritsenko, V. A.; Gutakovskii, A. K.; Prosvirin, I. P.

В: JETP Letters, Том 109, № 2, 01.01.2019, стр. 116-120.

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

TY - JOUR

T1 - Structure of Hf 0.9 La 0.1 O 2 Ferroelectric Films Obtained by the Atomic Layer Deposition

AU - Perevalov, T. V.

AU - Gritsenko, V. A.

AU - Gutakovskii, A. K.

AU - Prosvirin, I. P.

PY - 2019/1/1

Y1 - 2019/1/1

N2 - Thin films of La-doped hafnium oxide synthesized by plasma-enhanced atomic layer deposition with subsequent rapid annealing have been studied. It has been found that the films under study have an orthorhombic noncentrosymmetric structure with the space group Pmn2 1 . It has been shown that these films have ferroelectric properties. The ratio of atomic concentrations of elements in a film has been determined. It has been found that the film consists of the mixture of the HfO 2 and La 2 O 3 phases. It has been shown that argon ion etching results in the generation of oxygen vacancies with a concentration of about 1 at % in the surface region of the films. Vacancies are formed primarily through the knock-out of oxygen atoms to interstitial positions with the formation of a Frenkel pair.

AB - Thin films of La-doped hafnium oxide synthesized by plasma-enhanced atomic layer deposition with subsequent rapid annealing have been studied. It has been found that the films under study have an orthorhombic noncentrosymmetric structure with the space group Pmn2 1 . It has been shown that these films have ferroelectric properties. The ratio of atomic concentrations of elements in a film has been determined. It has been found that the film consists of the mixture of the HfO 2 and La 2 O 3 phases. It has been shown that argon ion etching results in the generation of oxygen vacancies with a concentration of about 1 at % in the surface region of the films. Vacancies are formed primarily through the knock-out of oxygen atoms to interstitial positions with the formation of a Frenkel pair.

UR - http://www.scopus.com/inward/record.url?scp=85064804024&partnerID=8YFLogxK

U2 - 10.1134/S0021364019020115

DO - 10.1134/S0021364019020115

M3 - Article

AN - SCOPUS:85064804024

VL - 109

SP - 116

EP - 120

JO - JETP Letters

JF - JETP Letters

SN - 0021-3640

IS - 2

ER -

Perevalov TV, Gritsenko VA, Gutakovskii AK, Prosvirin IP. Structure of Hf _0.9 La _0.1 O ₂ Ferroelectric Films Obtained by the Atomic Layer Deposition. JETP Letters. 2019 Янв. 1;109(2):116-120. https://doi.org/10.1134/S0021364019020115