Structure of Hf 0.9 La 0.1 O 2 Ferroelectric Films Obtained by the Atomic Layer Deposition

T. V. Perevalov, V. A. Gritsenko, A. K. Gutakovskii, I. P. Prosvirin

Результат исследования: Научные публикации в периодических изданияхстатьярецензирование

1 Цитирования (Scopus)


Thin films of La-doped hafnium oxide synthesized by plasma-enhanced atomic layer deposition with subsequent rapid annealing have been studied. It has been found that the films under study have an orthorhombic noncentrosymmetric structure with the space group Pmn2 1 . It has been shown that these films have ferroelectric properties. The ratio of atomic concentrations of elements in a film has been determined. It has been found that the film consists of the mixture of the HfO 2 and La 2 O 3 phases. It has been shown that argon ion etching results in the generation of oxygen vacancies with a concentration of about 1 at % in the surface region of the films. Vacancies are formed primarily through the knock-out of oxygen atoms to interstitial positions with the formation of a Frenkel pair.

Язык оригиналаанглийский
Страницы (с-по)116-120
Число страниц5
ЖурналJETP Letters
Номер выпуска2
СостояниеОпубликовано - 1 янв 2019


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