Structure of Hf                         
                        0.9
                                                 La                         
                        0.1
                                                 O                         
                        2
                                                  Ferroelectric Films Obtained by the Atomic Layer Deposition

T. V. Perevalov; V. A. Gritsenko; A. K. Gutakovskii; I. P. Prosvirin

doi:10.1134/S0021364019020115

Structure of Hf _0.9 La _0.1 O ₂ Ferroelectric Films Obtained by the Atomic Layer Deposition

T. V. Perevalov, V. A. Gritsenko, A. K. Gutakovskii, I. P. Prosvirin

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

1 Цитирования (Scopus)

Аннотация

Thin films of La-doped hafnium oxide synthesized by plasma-enhanced atomic layer deposition with subsequent rapid annealing have been studied. It has been found that the films under study have an orthorhombic noncentrosymmetric structure with the space group Pmn2 ₁ . It has been shown that these films have ferroelectric properties. The ratio of atomic concentrations of elements in a film has been determined. It has been found that the film consists of the mixture of the HfO ₂ and La ₂ O ₃ phases. It has been shown that argon ion etching results in the generation of oxygen vacancies with a concentration of about 1 at % in the surface region of the films. Vacancies are formed primarily through the knock-out of oxygen atoms to interstitial positions with the formation of a Frenkel pair.

Язык оригинала	английский
Страницы (с-по)	116-120
Число страниц	5
Журнал	JETP Letters
Том	109
Номер выпуска	2
DOI	https://doi.org/10.1134/S0021364019020115
Состояние	Опубликовано - 1 янв. 2019

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10.1134/S0021364019020115

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Perevalov, T. V., Gritsenko, V. A., Gutakovskii, A. K., & Prosvirin, I. P. (2019). Structure of Hf _0.9 La _0.1 O ₂ Ferroelectric Films Obtained by the Atomic Layer Deposition. JETP Letters, 109(2), 116-120. https://doi.org/10.1134/S0021364019020115

Perevalov, T. V. ; Gritsenko, V. A. ; Gutakovskii, A. K. и др. / Structure of Hf _0.9 La _0.1 O ₂ Ferroelectric Films Obtained by the Atomic Layer Deposition. В: JETP Letters. 2019 ; Том 109, № 2. стр. 116-120.

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abstract = " Thin films of La-doped hafnium oxide synthesized by plasma-enhanced atomic layer deposition with subsequent rapid annealing have been studied. It has been found that the films under study have an orthorhombic noncentrosymmetric structure with the space group Pmn2 1 . It has been shown that these films have ferroelectric properties. The ratio of atomic concentrations of elements in a film has been determined. It has been found that the film consists of the mixture of the HfO 2 and La 2 O 3 phases. It has been shown that argon ion etching results in the generation of oxygen vacancies with a concentration of about 1 at % in the surface region of the films. Vacancies are formed primarily through the knock-out of oxygen atoms to interstitial positions with the formation of a Frenkel pair. ",

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Perevalov, TV, Gritsenko, VA, Gutakovskii, AK & Prosvirin, IP 2019, 'Structure of Hf _0.9 La _0.1 O ₂ Ferroelectric Films Obtained by the Atomic Layer Deposition', JETP Letters, том. 109, № 2, стр. 116-120. https://doi.org/10.1134/S0021364019020115

Structure of Hf _0.9 La _0.1 O ₂ Ferroelectric Films Obtained by the Atomic Layer Deposition. / Perevalov, T. V.; Gritsenko, V. A.; Gutakovskii, A. K. и др.

В: JETP Letters, Том 109, № 2, 01.01.2019, стр. 116-120.

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

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AB - Thin films of La-doped hafnium oxide synthesized by plasma-enhanced atomic layer deposition with subsequent rapid annealing have been studied. It has been found that the films under study have an orthorhombic noncentrosymmetric structure with the space group Pmn2 1 . It has been shown that these films have ferroelectric properties. The ratio of atomic concentrations of elements in a film has been determined. It has been found that the film consists of the mixture of the HfO 2 and La 2 O 3 phases. It has been shown that argon ion etching results in the generation of oxygen vacancies with a concentration of about 1 at % in the surface region of the films. Vacancies are formed primarily through the knock-out of oxygen atoms to interstitial positions with the formation of a Frenkel pair.

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Perevalov TV, Gritsenko VA, Gutakovskii AK, Prosvirin IP. Structure of Hf _0.9 La _0.1 O ₂ Ferroelectric Films Obtained by the Atomic Layer Deposition. JETP Letters. 2019 янв. 1;109(2):116-120. https://doi.org/10.1134/S0021364019020115