Structure evolution and charge hysteresis in buried Hafnia-Alumina oxides

V. P. Popov; F. V. Tikhonenko; V. A. Antonov; K. A. Tolmachev; A. A. Lomov; A. V. Miakonkikh; K. V. Rudenko

doi:10.1016/j.sse.2022.108348

Structure evolution and charge hysteresis in buried Hafnia-Alumina oxides

V. P. Popov, F. V. Tikhonenko, V. A. Antonov, K. A. Tolmachev, A. A. Lomov, A. V. Miakonkikh, K. V. Rudenko

Физический факультет

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

Аннотация

Analysis of the high-k buried oxide phase evolution by the X-ray study, pseudo-MOSFET and CV measurements was used to separate the ferroelectric and interface dipole polarization, and charge trapping up to 300 °C. The thermal budgets during the rapid thermal annealing (RTA) 30 s at temperatures 600 to 1000 °C were established for different hafnia based stacks to ensure the recrystallization of HfO₂ layers and preservation of ferroelectric hysteresis. The highest hysteresis was obtained at the RTA stepwise temperature increase to 900 °C for the stack with supercicles HfO₂:Al₂O₃ (10:1).

Язык оригинала	английский
Номер статьи	108348
Журнал	Solid-State Electronics
Том	194
DOI	https://doi.org/10.1016/j.sse.2022.108348
Состояние	Опубликовано - авг. 2022

Предметные области OECD FOS+WOS

2.02 ЭЛЕКТРОТЕХНИКА, ЭЛЕКТРОННАЯ ТЕХНИКА, ИНФОРМАЦИОННЫЕ ТЕХНОЛОГИИ
2.05 ТЕХНОЛОГИЯ МАТЕРИАЛОВ
1.03 ФИЗИЧЕСКИЕ НАУКИ И АСТРОНОМИЯ

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10.1016/j.sse.2022.108348

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title = "Structure evolution and charge hysteresis in buried Hafnia-Alumina oxides",

abstract = "Analysis of the high-k buried oxide phase evolution by the X-ray study, pseudo-MOSFET and CV measurements was used to separate the ferroelectric and interface dipole polarization, and charge trapping up to 300 °C. The thermal budgets during the rapid thermal annealing (RTA) 30 s at temperatures 600 to 1000 °C were established for different hafnia based stacks to ensure the recrystallization of HfO2 layers and preservation of ferroelectric hysteresis. The highest hysteresis was obtained at the RTA stepwise temperature increase to 900 °C for the stack with supercicles HfO2:Al2O3 (10:1).",

keywords = "Dipoles, Ferroelectric, GIXRD, high-k BOX, Phases",

author = "Popov, {V. P.} and Tikhonenko, {F. V.} and Antonov, {V. A.} and Tolmachev, {K. A.} and Lomov, {A. A.} and Miakonkikh, {A. V.} and Rudenko, {K. V.}",

note = "The authors thank for the partial financial support from the RFBR grant no. 19-29-03031. Publisher Copyright: {\textcopyright} 2022 Elsevier Ltd",

year = "2022",

month = aug,

doi = "10.1016/j.sse.2022.108348",

language = "English",

volume = "194",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Ltd",

}

TY - JOUR

T1 - Structure evolution and charge hysteresis in buried Hafnia-Alumina oxides

AU - Popov, V. P.

AU - Tikhonenko, F. V.

AU - Antonov, V. A.

AU - Tolmachev, K. A.

AU - Lomov, A. A.

AU - Miakonkikh, A. V.

AU - Rudenko, K. V.

PY - 2022/8

Y1 - 2022/8

N2 - Analysis of the high-k buried oxide phase evolution by the X-ray study, pseudo-MOSFET and CV measurements was used to separate the ferroelectric and interface dipole polarization, and charge trapping up to 300 °C. The thermal budgets during the rapid thermal annealing (RTA) 30 s at temperatures 600 to 1000 °C were established for different hafnia based stacks to ensure the recrystallization of HfO2 layers and preservation of ferroelectric hysteresis. The highest hysteresis was obtained at the RTA stepwise temperature increase to 900 °C for the stack with supercicles HfO2:Al2O3 (10:1).

AB - Analysis of the high-k buried oxide phase evolution by the X-ray study, pseudo-MOSFET and CV measurements was used to separate the ferroelectric and interface dipole polarization, and charge trapping up to 300 °C. The thermal budgets during the rapid thermal annealing (RTA) 30 s at temperatures 600 to 1000 °C were established for different hafnia based stacks to ensure the recrystallization of HfO2 layers and preservation of ferroelectric hysteresis. The highest hysteresis was obtained at the RTA stepwise temperature increase to 900 °C for the stack with supercicles HfO2:Al2O3 (10:1).

KW - Dipoles

KW - Ferroelectric

KW - GIXRD

KW - high-k BOX

KW - Phases

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UR - https://www.mendeley.com/catalogue/e44d25ac-e6f9-317d-bcbd-768b3358eff9/

U2 - 10.1016/j.sse.2022.108348

DO - 10.1016/j.sse.2022.108348

M3 - Article

AN - SCOPUS:85129081099

VL - 194

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

M1 - 108348

ER -

Structure evolution and charge hysteresis in buried Hafnia-Alumina oxides

Аннотация

Предметные области OECD FOS+WOS

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