Structural transformation of the BiSbTeSe2 topological insulator during Co laser MBE deposition

A. K. Kaveev, S. M. Suturin, V. A. Golyashov, K. A. Kokh, O. E. Tereshchenko

Результат исследования: Научные публикации в периодических изданияхстатья по материалам конференции

Аннотация

The studies of the structural transformation of BiSbTeSe2 topological insulator during Co deposition were carried out. It was shown that Co, being deposited on BiSbTeSe2(0001) at 330°C, substantially modifies topmost part of the substrate. Reciprocal space mapping studies using RHEED data analysis reveal formation of the well-ordered layer with the modified composition and crystalline structure. It was found that this layer consists of three orthorhombic structural domains oriented at 120° to each other. Each domain has Pmnn space group characteristic fot CoTexSe2-x. The lattice parameters and epitaxial relations were found.

Язык оригиналаанглийский
Номер статьи055016
ЖурналJournal of Physics: Conference Series
Том1400
Номер выпуска5
DOI
СостояниеОпубликовано - 11 дек 2019
СобытиеInternational Conference PhysicA.SPb 2019 - Saint Petersburg, Российская Федерация
Продолжительность: 22 окт 201924 окт 2019

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