Аннотация
The studies of the structural transformation of BiSbTeSe2 topological insulator during Co deposition were carried out. It was shown that Co, being deposited on BiSbTeSe2(0001) at 330°C, substantially modifies topmost part of the substrate. Reciprocal space mapping studies using RHEED data analysis reveal formation of the well-ordered layer with the modified composition and crystalline structure. It was found that this layer consists of three orthorhombic structural domains oriented at 120° to each other. Each domain has Pmnn space group characteristic fot CoTexSe2-x. The lattice parameters and epitaxial relations were found.
Язык оригинала | английский |
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Номер статьи | 055016 |
Число страниц | 4 |
Журнал | Journal of Physics: Conference Series |
Том | 1400 |
Номер выпуска | 5 |
DOI | |
Состояние | Опубликовано - 11 дек 2019 |
Событие | International Conference PhysicA.SPb 2019 - Saint Petersburg, Российская Федерация Продолжительность: 22 окт 2019 → 24 окт 2019 |