Stress-induced indirect to direct band gap transition in β -FeSi2 nanocrystals embedded in Si

A. V. Shevlyagin, D. L. Goroshko, E. A. Chusovitin, S. A. Balagan, S. A. Dotsenko, K. N. Galkin, N. G. Galkin, T. S. Shamirzaev, A. K. Gutakovskii, M. Iinuma, Y. Terai

Результат исследования: Публикации в книгах, отчётах, сборниках, трудах конференцийстатья в сборнике материалов конференциинаучнаярецензирование

Аннотация

Embedded in silicon β-FeSi2 nanocrystals (NCs) were grown on Si(111) by solid phase epitaxy of a thin iron film followed by Si molecular beam epitaxy. After solid phase epitaxy, a mixture of β-FeSi2 and ϵ-FeSi nanocrystals is formed on the surface, sometimes β and ϵ phases coexist inside one nanocrystal. During initial stage of Si molecular beam epitaxy all ϵ-FeSi transforms into β-FeSi2. β-FeSi2 nanocrystals tend to move following Si growth front. By adjusting growth condition, we manage to prevent the nanocrystals from moving and to fabricate 7-layer n-Si(111)/β-FeSi2-NCs/p+-Si silicon heterostructure with embedded β-FeSi2 NCs. An epitaxial relationship and a stress induced in the nanocrystals by silicon matrix were found to be suitable for indirect to direct band gap transition in β-FeSi2. Of the heterostructure, a n-i-p avalanche photodetector and a light-emitting diode were formed. They have shown relatively good performance: ultrabroadband photoresponse from the visible (400 nm) to short-wavelength infrared (1800 nm) ranges owing to quantum-confined Stark effect in the nanocrystals and optical emission power of up to 25 μW at 9 A/cm2 with an external quantum efficiency of 0.009% at room temperature owing to a direct fundamental transition in stressed β-FeSi2 nanocrystals.

Язык оригиналаанглийский
Название основной публикацииProceedings of International Conference on Metamaterials and Nanophotonics, METANANO 2017
ИздательAmerican Institute of Physics Inc.
Число страниц5
Том1874
ISBN (электронное издание)9780735415546
DOI
СостояниеОпубликовано - 14 сен 2017
СобытиеInternational Conference on Metamaterials and Nanophotonics, METANANO 2017 - Vladivostok, Российская Федерация
Продолжительность: 18 сен 201722 сен 2017

Серия публикаций

НазваниеAIP Conference Proceedings
ИздательAMER INST PHYSICS
Том1874
ISSN (печатное издание)0094-243X

Конференция

КонференцияInternational Conference on Metamaterials and Nanophotonics, METANANO 2017
СтранаРоссийская Федерация
ГородVladivostok
Период18.09.201722.09.2017

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    Shevlyagin, A. V., Goroshko, D. L., Chusovitin, E. A., Balagan, S. A., Dotsenko, S. A., Galkin, K. N., Galkin, N. G., Shamirzaev, T. S., Gutakovskii, A. K., Iinuma, M., & Terai, Y. (2017). Stress-induced indirect to direct band gap transition in β -FeSi2 nanocrystals embedded in Si. В Proceedings of International Conference on Metamaterials and Nanophotonics, METANANO 2017 (Том 1874). [030007] (AIP Conference Proceedings; Том 1874). American Institute of Physics Inc.. https://doi.org/10.1063/1.4998036