Stimulated emission from HgCdTe quantum well heterostructures at wavelengths up to 19.5 μ m

S. V. Morozov; V. V. Rumyantsev; M. A. Fadeev; M. S. Zholudev; K. E. Kudryavtsev; A. V. Antonov; A. M. Kadykov; A. A. Dubinov; N. N. Mikhailov; S. A. Dvoretsky; V. I. Gavrilenko

doi:10.1063/1.4996966

Stimulated emission from HgCdTe quantum well heterostructures at wavelengths up to 19.5 μ m

S. V. Morozov, V. V. Rumyantsev, M. A. Fadeev, M. S. Zholudev, K. E. Kudryavtsev, A. V. Antonov, A. M. Kadykov, A. A. Dubinov, N. N. Mikhailov, S. A. Dvoretsky, V. I. Gavrilenko

Учебно-научная лаборатория квантовых явлений в конденсированных системах ФФ

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

39 Цитирования (Scopus)

Аннотация

We report on stimulated emission at wavelengths up to 19.5 μm from HgTe/HgCdTe quantum well heterostructures with wide gap HgCdTe dielectric waveguide, grown by molecular beam epitaxy on GaAs(013) substrates. The mitigation of Auger processes in structures under study is exemplified, and the promising routes towards the 20-50 μm wavelength range, where HgCdTe lasers may be competitive to the prominent emitters, are discussed.

Язык оригинала	английский
Номер статьи	192101
Число страниц	5
Журнал	Applied Physics Letters
Том	111
Номер выпуска	19
DOI	https://doi.org/10.1063/1.4996966
Состояние	Опубликовано - 6 ноя 2017

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10.1063/1.4996966

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Morozov, S. V., Rumyantsev, V. V., Fadeev, M. A., Zholudev, M. S., Kudryavtsev, K. E., Antonov, A. V., Kadykov, A. M., Dubinov, A. A., Mikhailov, N. N., Dvoretsky, S. A., & Gavrilenko, V. I. (2017). Stimulated emission from HgCdTe quantum well heterostructures at wavelengths up to 19.5 μ m. Applied Physics Letters, 111(19), [192101]. https://doi.org/10.1063/1.4996966

@article{20c161c4721a419197af2c3eb895bc89,

title = "Stimulated emission from HgCdTe quantum well heterostructures at wavelengths up to 19.5 μ m",

abstract = "We report on stimulated emission at wavelengths up to 19.5 μm from HgTe/HgCdTe quantum well heterostructures with wide gap HgCdTe dielectric waveguide, grown by molecular beam epitaxy on GaAs(013) substrates. The mitigation of Auger processes in structures under study is exemplified, and the promising routes towards the 20-50 μm wavelength range, where HgCdTe lasers may be competitive to the prominent emitters, are discussed.",

keywords = "MOLECULAR-BEAM EPITAXY, CASCADE LASERS, WAVE-GUIDE, M RANGE, LIFETIMES, OPERATION, GROWTH",

author = "Morozov, {S. V.} and Rumyantsev, {V. V.} and Fadeev, {M. A.} and Zholudev, {M. S.} and Kudryavtsev, {K. E.} and Antonov, {A. V.} and Kadykov, {A. M.} and Dubinov, {A. A.} and Mikhailov, {N. N.} and Dvoretsky, {S. A.} and Gavrilenko, {V. I.}",

year = "2017",

month = nov,

day = "6",

doi = "10.1063/1.4996966",

language = "English",

volume = "111",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "19",

}

Stimulated emission from HgCdTe quantum well heterostructures at wavelengths up to 19.5 μ m. / Morozov, S. V.; Rumyantsev, V. V.; Fadeev, M. A.; Zholudev, M. S.; Kudryavtsev, K. E.; Antonov, A. V.; Kadykov, A. M.; Dubinov, A. A.; Mikhailov, N. N.; Dvoretsky, S. A.; Gavrilenko, V. I.

В: Applied Physics Letters, Том 111, № 19, 192101, 06.11.2017.

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

TY - JOUR

T1 - Stimulated emission from HgCdTe quantum well heterostructures at wavelengths up to 19.5 μ m

AU - Morozov, S. V.

AU - Rumyantsev, V. V.

AU - Fadeev, M. A.

AU - Zholudev, M. S.

AU - Kudryavtsev, K. E.

AU - Antonov, A. V.

AU - Kadykov, A. M.

AU - Dubinov, A. A.

AU - Mikhailov, N. N.

AU - Dvoretsky, S. A.

AU - Gavrilenko, V. I.

PY - 2017/11/6

Y1 - 2017/11/6

N2 - We report on stimulated emission at wavelengths up to 19.5 μm from HgTe/HgCdTe quantum well heterostructures with wide gap HgCdTe dielectric waveguide, grown by molecular beam epitaxy on GaAs(013) substrates. The mitigation of Auger processes in structures under study is exemplified, and the promising routes towards the 20-50 μm wavelength range, where HgCdTe lasers may be competitive to the prominent emitters, are discussed.

AB - We report on stimulated emission at wavelengths up to 19.5 μm from HgTe/HgCdTe quantum well heterostructures with wide gap HgCdTe dielectric waveguide, grown by molecular beam epitaxy on GaAs(013) substrates. The mitigation of Auger processes in structures under study is exemplified, and the promising routes towards the 20-50 μm wavelength range, where HgCdTe lasers may be competitive to the prominent emitters, are discussed.

KW - MOLECULAR-BEAM EPITAXY

KW - CASCADE LASERS

KW - WAVE-GUIDE

KW - M RANGE

KW - LIFETIMES

KW - OPERATION

KW - GROWTH

UR - http://www.scopus.com/inward/record.url?scp=85033563898&partnerID=8YFLogxK

U2 - 10.1063/1.4996966

DO - 10.1063/1.4996966

M3 - Article

AN - SCOPUS:85033563898

VL - 111

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 19

M1 - 192101

ER -