Аннотация
In this article, we report the unusual growth of diamond crystals produced in Mg-C and Mg-Ge-C systems at high-pressure, high-temperature conditions. We have found that the growth of the habit {100} faces occurs by deposition of a substance (carbon) on two nonequivalent {100} and {111} surfaces. Precipitation of carbon atoms on the (100) plane occurs by elementary layers with a thickness of about 0.1 and 0.2 nm. The change in the density of elementary steps leads to the formation of step bunches that transform into faceted macrostates with an increase in their thickness of more than 400 nm. The maximum inclination angle of macrostep ends corresponds to the {111} faces position. As a result, singular stable {111} microfacets are formed at the ends of the macrosteps, which themselves grow layer by layer. The deposition of carbon on {100} and {111} surfaces of one simple form of diamond crystals leads to the zonal structure of {100} growth sectors.
Язык оригинала | английский |
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Страницы (с-по) | 152-158 |
Число страниц | 7 |
Журнал | Crystal Growth and Design |
Том | 18 |
Номер выпуска | 1 |
DOI | |
Состояние | Опубликовано - 3 янв. 2018 |