Sputtering of silicon by atomic and cluster bismuth ions: An influence of projectile nuclearity and specific kinetic energy on the sputter yield

A. Tolstogouzov, P. Mazarov, A. E. Ieshkin, S. F. Belykh, N. G. Korobeishchikov, V. O. Pelenovich, D. J. Fu

Результат исследования: Научные публикации в периодических изданияхстатьярецензирование

Аннотация

An influence of the specific kinetic energy Esp and nuclearity n of Bin+ (n = 1–4) projectiles on the sputter yield of Si was studied by means of the volume loss method. It was found that the specific sputter yield Ysp exhibited non-additive increase with an increasing of n and Esp values. As a non-additivity k-factor, the slope of the straight line approximating Ysp(n) dependences at the same specific energy was proposed to use. For Bin+ (n = 1–4) projectiles at Esp = 10 keV at−1 the k-factor was equal to 0.41 ± 0.08. In addition, it was ascertained that the efficiency of energy transfer from projectiles to target atoms increased with an increase in the projectile nuclearity, e.g., it was 2.8 times greater for Bi3+ bombarding ions as compared with Bi+ ones.

Язык оригиналаанглийский
Номер статьи110188
ЖурналVacuum
Том188
DOI
СостояниеОпубликовано - июн 2021

Предметные области OECD FOS+WOS

  • 2.05 ТЕХНОЛОГИЯ МАТЕРИАЛОВ
  • 1.03 ФИЗИЧЕСКИЕ НАУКИ И АСТРОНОМИЯ

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