Spin splitting of surface states in HgTe quantum wells

A. A. Dobretsova, Z. D. Kvon, S. S. Krishtopenko, N. N. Mikhailov, S. A. Dvoretsky

Результат исследования: Научные публикации в периодических изданияхстатьярецензирование

2 Цитирования (Scopus)


We report on beating appearance in Shubnikov-de Haas oscillations in conduction band of 18-22 nm HgTe quantum wells under applied top-gate voltage. Analysis of the beatings reveals two electron concentrations at the Fermi level arising due to Rashba-like spin splitting of the first conduction subband H1. The difference ΔNs in two concentrations as a function of the gate voltage is qualitatively explained by a proposed toy electrostatic model involving the surface states localized at quantum well interfaces. Experimental values of ΔNs are also in a good quantitative agreement with self-consistent calculations of Poisson and Schrödinger equations with eight- band k . p Hamiltonian. Our results clearly demonstrate that the large spin splitting of the first conduction subband is caused by surface nature of H1 states hybridized with the heavy-hole band.

Язык оригиналаанглийский
Страницы (с-по)159-164
Число страниц6
ЖурналLow Temperature Physics
Номер выпуска2
СостояниеОпубликовано - 1 фев 2019


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