Spin-resolved band structure of heterojunction Bi-bilayer/3D topological insulator in the quantum dimension regime in annealed Bi2Te2.4Se0.6

I. I. Klimovskikh, D. Sostina, A. Petukhov, A. G. Rybkin, S. V. Eremeev, E. V. Chulkov, O. E. Tereshchenko, K. A. Kokh, A. M. Shikin

Результат исследования: Научные публикации в периодических изданияхстатья

8 Цитирования (Scopus)

Аннотация

Two-and three-dimensional topological insulators are the key materials for the future nanoelectronic and spintronic devices and quantum computers. By means of angle-and spin-resolved photoemission spectroscopy we study the electronic and spin structure of the Bi-bilayer/3D topological insulator in quantum tunneling regime formed under the short annealing of Bi2Te2.4Se0.6. Owing to the temperature-induced restructuring of the topological insulator's surface quintuple layers, the hole-like spin-split Bi-bilayer bands and the parabolic electronic-like state are observed instead of the Dirac cone. Scanning Tunneling Microscopy and X-ray Photoemission Spectroscopy measurements reveal the appearance of the Bi2 terraces at the surface under the annealing. The experimental results are supported by density functional theory calculations, predicting the spin-polarized Bi-bilayer bands interacting with the quintuple-layers-derived states. Such an easily formed heterostructure promises exciting applications in spin transport devices and low-energy electronics.

Язык оригиналаанглийский
Номер статьи45797
Страницы (с-по)45797
Число страниц6
ЖурналScientific Reports
Том7
DOI
СостояниеОпубликовано - 5 апр 2017

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