Spin-orbit splitting of the conduction band in HgTe quantum wells: Role of different mechanisms

G. M. Minkov, V. Ya Aleshkin, O. E. Rut, A. A. Sherstobitov, A. V. Germanenko, S. A. Dvoretski, N. N. Mikhailov

Результат исследования: Научные публикации в периодических изданияхстатья

2 Цитирования (Scopus)

Аннотация

Spin-orbit splitting of conduction band in HgTe quantum wells was studied experimentally. In order to recognize the role of different mechanisms, we carried out detailed measurements of the Shubnikov-de Haas oscillations in gated structures with a quantum well widths from 8 to 18 nm over a wide range of electron density. With increasing electron density controlled by the gate voltage, splitting of the maximum of the oscillation Fourier spectrum f 0 into two components f 1 and f 2 and the appearance of the low-frequency component f 3 was observed. Our analysis shows that the components f 1 and f 2 are determined by the electron densities n 1 and n 2 in spin-orbit split subbands while the f 3 component results from magneto-intersubband oscillations so that it is determined by the difference between these densities Δn. This allows us to obtain all three values n 1 , n 2 and Δn independently. Comparison of the data obtained with results of self-consistent calculations carried out within the framework of four-band kP model shows that the main contribution to spin-orbit splitting comes from the Bychkov-Rashba effect. Contribution of the interface inversion asymmetry to the splitting of the conduction band turns out to be four-to-five times less than that for the valence band in the same structures.

Язык оригиналаанглийский
Страницы (с-по)95-99
Число страниц5
ЖурналPhysica E: Low-Dimensional Systems and Nanostructures
Том110
DOI
СостояниеОпубликовано - 1 июн 2019

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