## Аннотация

Spin-orbit splitting of conduction band in HgTe quantum wells was studied experimentally. In order to recognize the role of different mechanisms, we carried out detailed measurements of the Shubnikov-de Haas oscillations in gated structures with a quantum well widths from 8 to 18 nm over a wide range of electron density. With increasing electron density controlled by the gate voltage, splitting of the maximum of the oscillation Fourier spectrum f
_{0}
into two components f
_{1}
and f
_{2}
and the appearance of the low-frequency component f
_{3}
was observed. Our analysis shows that the components f
_{1}
and f
_{2}
are determined by the electron densities n
_{1}
and n
_{2}
in spin-orbit split subbands while the f
_{3}
component results from magneto-intersubband oscillations so that it is determined by the difference between these densities Δn. This allows us to obtain all three values n
_{1}
, n
_{2}
and Δn independently. Comparison of the data obtained with results of self-consistent calculations carried out within the framework of four-band kP model shows that the main contribution to spin-orbit splitting comes from the Bychkov-Rashba effect. Contribution of the interface inversion asymmetry to the splitting of the conduction band turns out to be four-to-five times less than that for the valence band in the same structures.

Язык оригинала | английский |
---|---|

Страницы (с-по) | 95-99 |

Число страниц | 5 |

Журнал | Physica E: Low-Dimensional Systems and Nanostructures |

Том | 110 |

DOI | |

Состояние | Опубликовано - 1 июн 2019 |