Specific features of the ion-beam synthesis of Ge nanocrystals in SiO2 thin films

I. E. Tyschenko, A. G. Cherkov, V. A. Volodin, M. Voelskow

Результат исследования: Научные публикации в периодических изданияхстатья

Аннотация

The systematic features of the formation of Ge nanocrystals in SiO2 thin films implanted with Ge+ ions and then subjected to high-temperature annealing (1130°C) are studied in relation to hydrostatic pressure. It is established that annealing at atmospheric pressure is accompanied by the diffusion of Ge atoms from the implantation region to the Si substrate and does not induce the formation of Ge nanocrystals. An increase in pressure during annealing yields a deceleration in the diffusion of germanium into silicon and is accompanied by the formation of twinned lamellae at the Si/SiO2 interface (at pressures of ~103 bar) or by the nucleation and growth of Ge nanocrystals (at pressures of ~104 bar) in the SiO2 film. The results are discussed on the basis of the concept of a change in the activation volume of the formation and migration of point defects under conditions of compression.

Язык оригиналаанглийский
Страницы (с-по)1240-1246
Число страниц7
ЖурналSemiconductors
Том51
Номер выпуска9
DOI
СостояниеОпубликовано - 1 сен 2017

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