Simulation of charge transport in micro and nanoscale FETs with elements having different dielectric properties

A. M. Blokhin, E. A. Kruglova, B. V. Semisalov

Результат исследования: Научные публикации в периодических изданияхстатья по материалам конференции

Аннотация

The hydrodynamical model is used for description of the process of charge transport in semiconductors with a high rate of reliability. It is a set of nonlinear partial differential equations with small parameters and specific conditions at the boundaries of field effect transistors (FETs), which essentially complicates the process of finding its stationary solutions. To overcome these difficulties in the case of FETs with elements having different dielectric properties, a fast pseudospectral method has been developed. This method was used for advanced numerical simulation of charge transport in DG-MOSFET.

Язык оригиналаанглийский
Номер статьи012035
Число страниц7
ЖурналJournal of Physics: Conference Series
Том993
Номер выпуска1
DOI
СостояниеОпубликовано - 10 апр 2018
Событие19th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2017 - St. Petersburg, Российская Федерация
Продолжительность: 27 ноя 20171 дек 2017

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