Simulation of charge transport in micro and nanoscale FETs with elements having different dielectric properties

A. M. Blokhin; E. A. Kruglova; B. V. Semisalov

doi:10.1088/1742-6596/993/1/012035

Simulation of charge transport in micro and nanoscale FETs with elements having different dielectric properties

A. M. Blokhin, E. A. Kruglova, B. V. Semisalov

Кафедра дифференциальных уравнений ММФ

Результат исследования: Научные публикации в периодических изданиях › статья по материалам конференции › рецензирование

Аннотация

The hydrodynamical model is used for description of the process of charge transport in semiconductors with a high rate of reliability. It is a set of nonlinear partial differential equations with small parameters and specific conditions at the boundaries of field effect transistors (FETs), which essentially complicates the process of finding its stationary solutions. To overcome these difficulties in the case of FETs with elements having different dielectric properties, a fast pseudospectral method has been developed. This method was used for advanced numerical simulation of charge transport in DG-MOSFET.

Язык оригинала	английский
Номер статьи	012035
Число страниц	7
Журнал	Journal of Physics: Conference Series
Том	993
Номер выпуска	1
DOI	https://doi.org/10.1088/1742-6596/993/1/012035
Состояние	Опубликовано - 10 апр 2018
Событие	19th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2017 - St. Petersburg, Российская Федерация Продолжительность: 27 ноя 2017 → 1 дек 2017

Доступ к документу

10.1088/1742-6596/993/1/012035

Link to publication in Scopus

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Цитировать

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abstract = "The hydrodynamical model is used for description of the process of charge transport in semiconductors with a high rate of reliability. It is a set of nonlinear partial differential equations with small parameters and specific conditions at the boundaries of field effect transistors (FETs), which essentially complicates the process of finding its stationary solutions. To overcome these difficulties in the case of FETs with elements having different dielectric properties, a fast pseudospectral method has been developed. This method was used for advanced numerical simulation of charge transport in DG-MOSFET.",

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author = "Blokhin, {A. M.} and Kruglova, {E. A.} and Semisalov, {B. V.}",

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Simulation of charge transport in micro and nanoscale FETs with elements having different dielectric properties. / Blokhin, A. M.; Kruglova, E. A.; Semisalov, B. V.

В: Journal of Physics: Conference Series, Том 993, № 1, 012035, 10.04.2018.

Результат исследования: Научные публикации в периодических изданиях › статья по материалам конференции › рецензирование

TY - JOUR

T1 - Simulation of charge transport in micro and nanoscale FETs with elements having different dielectric properties

AU - Blokhin, A. M.

AU - Kruglova, E. A.

AU - Semisalov, B. V.

PY - 2018/4/10

Y1 - 2018/4/10

N2 - The hydrodynamical model is used for description of the process of charge transport in semiconductors with a high rate of reliability. It is a set of nonlinear partial differential equations with small parameters and specific conditions at the boundaries of field effect transistors (FETs), which essentially complicates the process of finding its stationary solutions. To overcome these difficulties in the case of FETs with elements having different dielectric properties, a fast pseudospectral method has been developed. This method was used for advanced numerical simulation of charge transport in DG-MOSFET.

AB - The hydrodynamical model is used for description of the process of charge transport in semiconductors with a high rate of reliability. It is a set of nonlinear partial differential equations with small parameters and specific conditions at the boundaries of field effect transistors (FETs), which essentially complicates the process of finding its stationary solutions. To overcome these difficulties in the case of FETs with elements having different dielectric properties, a fast pseudospectral method has been developed. This method was used for advanced numerical simulation of charge transport in DG-MOSFET.

KW - PARABOLIC BAND TRANSPORT

KW - HYDRODYNAMICAL MODEL

KW - MOMENT EQUATIONS

KW - SEMICONDUCTORS

KW - CLOSURE

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VL - 993

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

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T2 - 19th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2017

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