Sign-Alternating Photoconductivity in PbSnTe:In Films in the Space-Charge-Limited Current Regime

A. N. Akimov; I. O. Akhundov; D. V. Ishchenko; A. E. Klimov; I. G. Neizvestny; N. S. Paschin; S. P. Suprun; A. S. Tarasov; O. E. Tereshchenko; E. V. Fedosenko; V. N. Sherstyakova

doi:10.1134/S1063782620080035

Sign-Alternating Photoconductivity in PbSnTe:In Films in the Space-Charge-Limited Current Regime

A. N. Akimov, I. O. Akhundov, D. V. Ishchenko, A. E. Klimov, I. G. Neizvestny, N. S. Paschin, S. P. Suprun, A. S. Tarasov, O. E. Tereshchenko, E. V. Fedosenko, V. N. Sherstyakova

Результат исследования: Научные публикации в периодических изданиях › статья

Аннотация

The dependence of the photoconductivity sign on the bias voltage, intensity, and duration of illumination is studied for PbSnTe:In films in the space-charge-limited current regime. The role of traps (including surface ones) with a complex energy spectrum in the effects under observation is discussed.

Язык оригинала	английский
Страницы (с-по)	951-955
Число страниц	5
Журнал	Semiconductors
Том	54
Номер выпуска	8
DOI	https://doi.org/10.1134/S1063782620080035
Состояние	Опубликовано - 1 авг 2020

Доступ к документу

10.1134/S1063782620080035

Link to publication in Scopus

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Цитировать

Akimov, A. N., Akhundov, I. O., Ishchenko, D. V., Klimov, A. E., Neizvestny, I. G., Paschin, N. S., Suprun, S. P., Tarasov, A. S., Tereshchenko, O. E., Fedosenko, E. V., & Sherstyakova, V. N. (2020). Sign-Alternating Photoconductivity in PbSnTe:In Films in the Space-Charge-Limited Current Regime. Semiconductors, 54(8), 951-955. https://doi.org/10.1134/S1063782620080035

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title = "Sign-Alternating Photoconductivity in PbSnTe:In Films in the Space-Charge-Limited Current Regime",

abstract = "The dependence of the photoconductivity sign on the bias voltage, intensity, and duration of illumination is studied for PbSnTe:In films in the space-charge-limited current regime. The role of traps (including surface ones) with a complex energy spectrum in the effects under observation is discussed.",

keywords = "impurity states, PbSnTe, photoconductivity, surface states",

author = "Akimov, {A. N.} and Akhundov, {I. O.} and Ishchenko, {D. V.} and Klimov, {A. E.} and Neizvestny, {I. G.} and Paschin, {N. S.} and Suprun, {S. P.} and Tarasov, {A. S.} and Tereshchenko, {O. E.} and Fedosenko, {E. V.} and Sherstyakova, {V. N.}",

year = "2020",

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Sign-Alternating Photoconductivity in PbSnTe:In Films in the Space-Charge-Limited Current Regime. / Akimov, A. N.; Akhundov, I. O.; Ishchenko, D. V.; Klimov, A. E.; Neizvestny, I. G.; Paschin, N. S.; Suprun, S. P.; Tarasov, A. S.; Tereshchenko, O. E.; Fedosenko, E. V.; Sherstyakova, V. N.

В: Semiconductors, Том 54, № 8, 01.08.2020, стр. 951-955.

Результат исследования: Научные публикации в периодических изданиях › статья

TY - JOUR

T1 - Sign-Alternating Photoconductivity in PbSnTe:In Films in the Space-Charge-Limited Current Regime

AU - Akimov, A. N.

AU - Akhundov, I. O.

AU - Ishchenko, D. V.

AU - Klimov, A. E.

AU - Neizvestny, I. G.

AU - Paschin, N. S.

AU - Suprun, S. P.

AU - Tarasov, A. S.

AU - Tereshchenko, O. E.

AU - Fedosenko, E. V.

AU - Sherstyakova, V. N.

PY - 2020/8/1

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N2 - The dependence of the photoconductivity sign on the bias voltage, intensity, and duration of illumination is studied for PbSnTe:In films in the space-charge-limited current regime. The role of traps (including surface ones) with a complex energy spectrum in the effects under observation is discussed.

AB - The dependence of the photoconductivity sign on the bias voltage, intensity, and duration of illumination is studied for PbSnTe:In films in the space-charge-limited current regime. The role of traps (including surface ones) with a complex energy spectrum in the effects under observation is discussed.

KW - impurity states

KW - PbSnTe

KW - photoconductivity

KW - surface states

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