Shubnikov-de Haas oscillations in p and n-type topological insulator (BixSb1-x)2Te3

Ryota Akiyama, Kazuki Sumida, Satoru Ichinokura, Ryosuke Nakanishi, Akio Kimura, Konstantin A. Kokh, Oleg E. Tereshchenko, Shuji Hasegawa

Результат исследования: Научные публикации в периодических изданияхстатьярецензирование

7 Цитирования (Scopus)


We show Shubnikov-de Haas (SdH) oscillations in topological insulator (BixSb1-x)2Te3 flakes whose carrier types are p-type (x = 0.29, 0.34) and n-type (x = 0.42). The physical properties such as the Berry phase, carrier mobility, and scattering time significantly changed by tuning the Fermi-level position with the concentration x. The analyses of SdH oscillations by Landau-level fan diagram, Lifshitz-Kosevich theory, and Dingle-plot in the p-type samples with x = 0.29 and 0.34 showed the Berry phase of zero and a relatively low mobility (2000-6000 cm2 V-1 s-1). This is due to the dominant bulk component in transport. On the other hand, the mobility in the n-type sample with x = 0.42 reached a very large value ∼17 000 cm2 V-1 s-1 and the Berry phase of near π, whereas the SdH oscillations were neither purely two- nor three-dimensional. These suggest that the transport channel has a surface-bulk coupling state which makes the carrier scattering lesser and enhances the mobility and has a character between two- and three-dimension.

Язык оригиналаанглийский
Номер статьи265001
Число страниц8
ЖурналJournal of Physics Condensed Matter
Номер выпуска26
СостояниеОпубликовано - 6 июн 2018


Подробные сведения о темах исследования «Shubnikov-de Haas oscillations in p and n-type topological insulator (BixSb1-x)2Te3». Вместе они формируют уникальный семантический отпечаток (fingerprint).